Zobrazeno 1 - 10
of 49
pro vyhledávání: '"Saurabh Sant"'
Autor:
Luai Al-Labadi, Saurabh Sant
Publikováno v:
Journal of Technology and Science Education, Vol 11, Iss 1, Pp 44-52 (2021)
Majority of the students now have access to portable devices that can provide countless information at their fingertips through various resources such as learning games and interactive applications. These resources allow immediate communication and i
Externí odkaz:
https://doaj.org/article/59d182513e4d4984ac14ac0b7c005cf1
Autor:
Saurabh Sant, Andreas Schenk
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 3, Iss 3, Pp 164-175 (2015)
In this paper a simulation study of the effect of conduction and valence band offsets on the subthreshold swing (SS) of a double-gate tunnel field-effect transistor (TFET) with gate-overlapped source is presented. The simulations show that if the pn-
Externí odkaz:
https://doaj.org/article/df13afbcda77440184800799564f27ee
Publikováno v:
2020 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD).
We employed 3D opto-electrical simulations to study the scaling effects of a plasmonic structure on the optical performance of butt-coupled waveguide photodetectors by placing an Ag stripe on top of the intrinsic region. It is found that cutoffs whic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b97fb5b0ec2160e936c6468d2a6eaca9
https://doi.org/10.1109/nusod49422.2020.9217664
https://doi.org/10.1109/nusod49422.2020.9217664
Autor:
Andreas Schenk, Saurabh Sant
Publikováno v:
Journal of Applied Physics, 128 (1)
A model for tunneling between conduction and valence band tail states in semiconductors is developed. Localized, lifetime-broadened wave functions originally proposed by Vinogradov [Fiz. Tverd. Tela 13, 3266 (1971)] facilitate the derivation of the m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::92fc318847808b34522d86825c2096dd
Autor:
Andreas Schenk, Saurabh Sant, Qian Ding, Yannick Baumgartner, Marilyne Sousa, Svenja Mauthe, Kirsten E. Moselund, Lukas Czornomaz
Publikováno v:
OFC
We demonstrate the first local monolithic integration of high-speed III-V p-i-n photodetectors on Si by in-plane epitaxy. Ultra-low capacitance permits data reception at 32Gbps. The approach allows close integration to electronics enabling future rec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b77cbcbec2a0ca9acc2b48893d4ab33a
https://doi.org/10.1364/ofc.2020.m3d.3
https://doi.org/10.1364/ofc.2020.m3d.3
Autor:
Andreas Schenk, Paulina Aguirre, Veeresh Deshpande, Saurabh Sant, Herwig Hahn, Lukas Czornomaz
Publikováno v:
IEEE Transactions on Electron Devices. 65:2578-2584
Ultrathin-body (UTB) III–V channel MOSFETs are known to suffer from the floating body effect which turns on a parasitic bipolar junction transistor (BJT) and increases the off-state leakage current. This paper presents a TCAD simulation study of UT
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bbd8271049bdff8845baea2b35724bf5
https://doi.org/10.1109/ted.2018.2824021
https://doi.org/10.1109/ted.2018.2824021
Autor:
C. Convertino, Heike Riel, Andreas Schenk, Lukas Czornomaz, Heinz Schmid, Saurabh Sant, Kirsten E. Moselund
Publikováno v:
ECS Transactions. 85:139-150
The tunnel FET (TFET) is considered as one of the most promising devices for ultra-low power operation, and it is clear that heterojunction devices are required to achieve simultaneously steep slope and high on-current (Ion). However, technologically
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c5e6d462a482c7fa8452f84cee220811
https://doi.org/10.1149/08506.0139ecst
https://doi.org/10.1149/08506.0139ecst
Autor:
Reine Wallenberg, Elvedin Memisevic, Lars-Erik Wernersson, Markus Hellenbrand, Johannes Svensson, Andreas Schenk, Erik Lind, Saurabh Sant, Axel R. Persson
Publikováno v:
Nano Letters, 17 (7)
Nano Letters; (2017)
Nano Letters; (2017)
Tunneling field-effect transistors (TunnelFET), a leading steep-slope transistor candidate, is still plagued by defect response, and there is a large discrepancy between measured and simulated device performance. In this work, highly scaled InAs/InxG
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fa2fa5eb30083b2e44f49328241788a9
https://doi.org/10.1021/acs.nanolett.7b01455
https://doi.org/10.1021/acs.nanolett.7b01455
Autor:
Saurabh Sant, Andreas Schenk
Publikováno v:
IEEE Electron Device Letters. 38:258-261
The sub-band formation in the triangular-like potential well in the channel of a tunnel field effect transistor (TFET) results in a delayed onset of the vertical band-to-band tunneling (BTBT) and in a reduction of the ON-current. Furthermore, the rou
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a2f998d17aed2bffd9717605324026f8
https://doi.org/10.1109/led.2016.2636658
https://doi.org/10.1109/led.2016.2636658
Publikováno v:
2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD).
We report three optimized coupling geometries for a monolithically integrated In 0.53 Ga 0.47 As pin photodetector operating at 1350 nm wavelength. It is shown how plasmonics can further improve the performance.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::17f0239cab4035e85c831f4356b82307
https://doi.org/10.1109/nusod.2019.8806974
https://doi.org/10.1109/nusod.2019.8806974