Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Saurabh Chowdhury"'
Autor:
Saurabh Chowdhury
Publikováno v:
Development in Practice. 32:402-408
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d9eb662f8fe4c55658b817c5ddff18c2
https://doi.org/10.1080/09614524.2021.2006148
https://doi.org/10.1080/09614524.2021.2006148
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 32:381-386
Electroless nickel immersion gold (ENIG) has emerged as a leading surface finish for under bump metallization (UBM). An ENIG surface typically exhibits excellent planarity, good electrical characteristics, wettability for solder, and wire bond-abilit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::22945bb49922c40646c6d1efefbaf80b
https://doi.org/10.1109/tsm.2019.2945517
https://doi.org/10.1109/tsm.2019.2945517
Autor:
Yoshimori Asai, Yoshiyuki Kotani, Kenji Kiuchi, Primit Parikh, Lee McCarthy, Kenji Imanishi, Yifeng Wu, Saurabh Chowdhury, Tsutsumo Ogino, David Rhodes, Likun Shen, Tsutomu Hosoda
Publikováno v:
2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
Manufacturing readiness of the world’s first highly reliable 650V GaN HEMT is demonstrated with high process capability (CpK >1.6) for leakage and on resistance. This reliable manufacturing process was developed in a Si-CMOS compatible 6-inch found
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f68022979020c97f96476e95becbd0f7
https://doi.org/10.1109/asmc49169.2020.9185385
https://doi.org/10.1109/asmc49169.2020.9185385
Autor:
Lee McCarthy, Ronald Barr, Yoshiyuki Kotani, Tsutomu Hosoda, Yifeng Wu, Tsutsumo Ogino, Saurabh Chowdhury, Likun Shen, Pete Smith, Kenji Imanishi, Yoshimori Asai, Kenji Kiuchi, John Gritters, Primit Parikh
Publikováno v:
2019 30th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
This manuscript proves maturity of GaN-on-Si technology for the world’s first highly reliable 650V GaN HEMT [2],[3],[4],[5],[6],[7],[8] by demonstrating three years of manufacturing data of since ramp. This technology was initially developed in a p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bcccd414ced022a0271516f8918d5cbe
https://doi.org/10.1109/asmc.2019.8791814
https://doi.org/10.1109/asmc.2019.8791814
Autor:
Saurabh Chowdhury, YiFeng Wu, Likun Shen, Kurt Smith, Peter Smith, Toshihide Kikkawa, John Gritters, Lee McCarthy, Rakesh Lal, Ronald Barr, Zhan Wang, Umesh Mishra, Primit Parikh, Tsutomu Hosoda, Ken Shono, Kenji Imanishi, Tsutsumo Ogino, Akitoshi Mochizuki, Kenji Kiuchi, Yoshimori Asai
Publikováno v:
2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).
Manufacturing readiness of the world's first highly reliable 650V GaN HEMT is demonstrated with high process capability (CpK>1.6) for leakage and on resistance. This technology was developed in a Si-CMOS compatible 6-inch foundry and has been demonst
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::839333cb1ec6879b34b4ceaf67aa9900
https://doi.org/10.1109/csics.2016.7751008
https://doi.org/10.1109/csics.2016.7751008
Autor:
Likun Shen, Toshihide Kikkawa, Yoshimori Asai, Kenji Imanishi, Saurabh Chowdhury, Pete Smith, Rakesh K. Lal, Tsutomu Hosoda, Ken Shono, Primit Parikh, Ronald Barr, Dixie Dunn, Lee McCarthy, Umesh K. Mishra, Kurt Smith, John Gritters, Yifeng Wu
Publikováno v:
IRPS
The reliability of 600 V GaN power switches, fabricated in a silicon CMOS foundry, has been demonstrated. JEDEC qualification of cascode packages and the long term reliability of GaN power switches has been estimated for the first and shown to be gre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74f1022c11659c48c6174e3007e66e14
https://doi.org/10.1109/irps.2015.7112766
https://doi.org/10.1109/irps.2015.7112766
Autor:
Toshihide Kikkawa, J. McKay, Dixie Dunn, Kenji Imanishi, Masahito Kanamura, Yoshimori Asai, Masamichi Kamiyama, Kazuo Itabashi, Brian L. Swenson, Ron Birkhahn, Yifeng Wu, Kurt Smith, Kenji Kiuchi, Douglas Thor, Primit Parikh, Likun Shen, John Gritters, Ken Shono, Martin J. Aguilera, Tsutomu Ogino, Yasumori Miyazaki, Takeshi Maeda, Saurabh Chowdhury, Akitoshi Mochizuki, S. Yea, Pete Smith, Shiniichi Akiyama, Susumu Kawasaki, Lee McCarthy, Jim Honea, H. Clement, Tsutomu Hosoda, Umesh K. Mishra, Rakesh K. Lal
Publikováno v:
2014 IEEE International Electron Devices Meeting.
In this paper, we demonstrate 600 V highly reliable GaN high electron mobility transistors (HEMTs) on Si substrates. GaN on Si technologies are most important for the mass-production at the Si-LSI manufacturing facility. High breakdown voltage over 1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d65de831f7dafb765298773c3a227b8
https://doi.org/10.1109/iedm.2014.7046968
https://doi.org/10.1109/iedm.2014.7046968