Ge composition dependence of the minority carrier lifetime in monocrystalline alloys of Si 1−xGe x

Autor: Ulyashin, A.G., Abrosimov, N.V., Bentzen, A., Suphellen, A., Sauar, E., Svensson, B.G.

Publikováno v: In Materials Science in Semiconductor Processing 2006 9(4):772-776

17.9% Metal-Wrap-Through mc-Si cells resulting in module efficiency of 17.0%

Autor: Weeber, A.W., Bende, E.E., Kossen, E.J., Koppes, M., Jong, P.C. de, Romijn, I.G., Lamers, M.W.P.E., Bennett, I.J., Mewe, A.A., Visser, T.P., Tjengdrawira, C., Brockholz, B., Sauar, E., Carnel, L., Julsrud, S., Naas, T.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::a2bdc9edf6d27ccd3b5b05a5d66b6c3b
http://resolver.tudelft.nl/uuid:cb9bbedc-d7fb-4e41-926a-8e65a348d747

17.9% back-contacted mc-Si cells resulting in module efficiency of 17.0%

Autor: Weeber, A.W., Kossen, E.J., Koppes, M., Jong, P.C. de, Romijn, I.G., Lamers, M.W.P.E., Bennett, I.J., Mewe, A.A., Bende, E.E., Visser, T.P., Tjengdrawira, C., Brockholz, B., Sauar, E., Carnel, L., Julsrud, S., Naas, T.

Publikováno v: 25th European Photovoltaic Solar Energy Conference and Exhibition-5th World Conference on Photovoltaic Energy Conversion, Valencia, Spain, 6-10 september 2010., 5 p.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::9fa8518dc4fb489cc146b305be6d646e
http://resolver.tudelft.nl/uuid:edcb0d11-9d19-49fb-b196-ab850c5849d6

Surface Passivation of Silicon Solar Cells by Amorphous Silicon/Silicon Nitride Dual Layers

Autor: Bentzen, A., Ulyashin, A., Suphellen, A., Sauar, E., Grambole, D., Wright, D. N., Marstein, E. S., Svensson, B. G., Holt, A.

Publikováno v: 15th International Photovoltaic Science and Engineering Conference (PVSEC-15), 10.-15.10.2005, Shanghai, China, 316-317

We have investigated surface passivation of silicon by a dual structure consisting of a hydrogenated amorphous silicon thin film capped by a silicon nitride anti-reflection layer, both layers deposited by plasma enhanced chemical vapor deposition. Th

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______4577::31e598d4d91c653af5a31a7f91d544b5
https://www.hzdr.de/publications/Publ-8081-1

Hydrogen Release and Defect Formation During Heat Treatments of SiNx:H/a-Si: H Double Passivation Layer on C-SI Substrate.

Autor: Ulyashin, A.G., Bentzen, A., Diplas, S., Suphellen, A., Gunnaes, A.E., Olsen, A., Svensson, B.G., Marstein, E.S., Holt, A., Grambole, D., Sauar, E.

Publikováno v: 2006 IEEE 4th World Conference on Photovoltaic Energy Conference; 2006, p1354-1357, 4p