Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Satyendra Sethi"'
Publikováno v:
Design for Manufacturability through Design-Process Integration VI.
Lithography development has become extremely computationally intensive. For a particular technology node being developed, it is critical to determine the optimum source and OPC/RET for each layer. In this paper we present a flexible new computation s
Autor:
Vitaliy Domnenko, Weimin Gao, Wolfgang Demmerle, Satyendra Sethi, Kevin Lucas, Wolfgang Hoppe
Publikováno v:
SPIE Proceedings.
As optical lithography feature size shrinks further, Resolution Enhancement Technologies (RETs) are pushed more aggressively and often have to be considered simultaneously. In this work, we explored a point-source approach for source -mask optimizati
Publikováno v:
SPIE Proceedings.
At advanced technology nodes with extremely low k1 lithography, it is very hard to achieve image fidelity requirements and process window for some layout configurations. Quite often these layouts are within simple design rule constraints for a given
Publikováno v:
Photomask Technology 2008.
Semiconductor manufacturers spend hundreds of millions of dollars and years of development time to create a new manufacturing process and to design frontrunner products to work on the new process. A considerable percentage of this large investment is
Autor:
Yongfa Fan, Satyendra Sethi, Qiaolin Zhang, Lena Zavyalova, Hua Song, Kevin Lucas, Jacek K. Tyminski
Publikováno v:
Optical Microlithography XXI.
Production optical proximity correction (OPC) tools employ compact optical models in order to accurately predict complicated optical lithography systems with good theoretical accuracy. Theoretical accuracy is not the same as usable prediction accurac
Publikováno v:
MRS Proceedings. 514
Advanced interconnect fabrication may require alternative TiITiN processes, such as an ionized metal plasma (IMP) sputtering technique to deposit Ti/TiN liner for sufficient step coverage in high aspect ratio contacts/vias. Since TiN is also widely u
Conference
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