Zobrazeno 1 - 1
of 1
pro vyhledávání: '"Satyam Parashar"'
Autor:
Arun Pachori, Satyam Parashar
Publikováno v:
International Journal of Engineering and Advanced Technology. 9:570-573
Confined field upgrade, particularly in the zone near the high voltage potential and ground potential will quicken the corruption and in this way causing pre-developed disappointment of the protecting material. Other than electrical field upgrade, me
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::82aeafd3405344a1ba33f05061417d48
https://doi.org/10.35940/ijeat.b3497.029320
https://doi.org/10.35940/ijeat.b3497.029320
