Výsledky vyhledávání - "Satyaki Sasmal"

Signature of gate-controlled magnetism and localization effects at Bi2Se3/EuS interface

Autor: Subramanian Mathimalar, Archit Bhardwaj, Biswarup Satpati, Saurabh Chaudhary, Satyaki Sasmal, Rajasekhar Pothala, Sekar Abhaya, Karthik V. Raman

Publikováno v: npj Quantum Materials, Vol 5, Iss 1, Pp 1-6 (2020)

Proximity of a topological insulator (TI) surface with a magnetic insulator (MI) can open an exchange gap at the Dirac point leading to exploration of surface quantum anomalous Hall effect. An important requirement to observe the above effect is to p

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ee6150543dcdb9868b3b7b0b882248de
http://link.springer.com/article/10.1038/s41535-020-00267-5

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In-depth Analysis of Anisotropic Magnetoconductance in Bi$_2$Se$_3$ thin films with electron-electron interaction corrections

Autor: Satyaki Sasmal, Dhavala Suri, Karthik V. Raman, Joynarayan Mukherjee

A combination of out-of-plane and in-plane magnetoconductance (MC) study in topological insulators (TI) is often used as an experimental technique to probe weak anti-localization (WAL) response of the topological surface states (TSSs). However, in ad

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::66c237a3c5b36655ec37d17b42a979d4
http://arxiv.org/abs/2106.07698

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In-depth analysis of anisotropic magnetoconductance in Bi

Autor: Satyaki, Sasmal, Joynarayan, Mukherjee, Dhavala, Suri, Karthik V, Raman

Publikováno v: Journal of physics. Condensed matter : an Institute of Physics journal. 33(46)

A combination of out-of-plane (OOP) and in-plane (IP) magnetoconductance (MC) study in topological insulators (TI) is often used as an experimental technique to probe weak anti-localization (WAL) response of the topological surface states (TSSs). How

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=pmid________::90cdbf2e609b47d8580421fae4a7919b
https://pubmed.ncbi.nlm.nih.gov/34399417

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Robust Monolayer Exchange-Bias Effect in Molecular Crane-Pulley Response at Magnetic Surface

Autor: Satyaki Sasmal, Archit Bhardwaj, Janmey Jay Panda, Karthik V. Raman, Suman Mundlia, Saurabh Chaudhary, Lakshman Peri

Publikováno v: Physical Review Applied. 14

Exchange-bias effect is a widely investigated topic for spintronic applications in magnetic data storage read heads and spin-valve sensors. This effect is observed in bilayers of magnetic materials comprising of a soft ferromagnet (FM) and an antifer

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f1f2367f93d55a8e0985031948d77022
https://doi.org/10.1103/physrevapplied.14.024095

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Akademický článek

In-depth analysis of anisotropic magnetoconductance in Bi2Se3 thin films with electron–electron interaction corrections.

Autor: Sasmal, Satyaki, Mukherjee, Joynarayan, Suri, Dhavala, Raman, Karthik V

Publikováno v: Journal of Physics: Condensed Matter; 11/17/2021, Vol. 33 Issue 46, p1-10, 10p

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