Zobrazeno 1 - 10
of 49
pro vyhledávání: '"Satyaban Bhunia"'
Autor:
A. Kumari, M. Zaman, A. Kumar, V. R. Singh, A. Ghosh, S. K. Sahoo, A. Rahaman, Satish K. Mandal, Satyaban Bhunia
Publikováno v:
Journal of Materials Engineering and Performance.
Autor:
Tamaghna Maitra, Sukhendu Mukherjee, Anway Pradhan, Suman Mukherjee, Arabinda Nayak, Satyaban Bhunia
Publikováno v:
Journal of Materials Science: Materials in Electronics. 33:9690-9699
Autor:
Avijit Dalal, Chiranjib Ghosh, Subhananda Chakrabarti, Shyam Murli Manohar Dhar Dwivedi, Anupam Ghosh, Hemant Ghadi, Satyaban Bhunia, Punam Murkute, Aniruddha Mondal
Publikováno v:
IEEE Photonics Technology Letters. 31:1526-1529
We have reported a new method of synthesis of InN nanowires (NWs) on p-Si (100) substrate by the vapour transport cum glancing angle deposition (GLAD) technique. The field emission gun transmission electron microscopy (FEG-TEM) reveals that the InN N
Autor:
Avishek Das, Hwee Leng Seng, Samarjit Chakraborty, Goutam Kumar Dalapati, Lakshmi Kanta Bera, Sukant K. Tripathy, Sukalyan Chattopadhyay, Satyaban Bhunia, Chandreswar Mahata, Shrabani Guhathakurata
Publikováno v:
Journal of Alloys and Compounds. 765:994-1002
Development of high quality p-type epitaxial gallium–arsenide (epi-GaAs) film on germanium substrates with sub-nm surface roughness is much sought after for the next generation high speed transistors and optical device applications. In our work, zi
Autor:
Satyaban Bhunia, P. Chinnamuthu, Punam Murkute, Shyam Murli Manohar Dhar Dwivedi, Aniruddha Mondal, Subhananda Chakrabarti, Hemant Ghadi, Anupam Ghosh, Shubhro Chakrabartty
Publikováno v:
Journal of Alloys and Compounds. 766:297-304
Indium Nitride (InN) quantum dots (QDs) were synthesized on Si substrate by oblique angle deposition method. The deposited InN QDs were of the order of 5-50 nm in diameter with density similar to 7 x 10(9)/cm(2) . The synthesized InN QDs were nearly
Autor:
Rajib Saha, Sanatan Chattopadhyay, Subhrajit Sikdar, Basudev Nag Chowdhury, Satyaban Bhunia, Anindita Das
Publikováno v:
IEEE Transactions on Electron Devices. 65:1466-1472
In this paper, a high-quality crystalline thin film (~10 nm) of titanium dioxide (TiO2-II) phase is grown on p-GaAs $\langle 100\rangle $ substrate by employing the vapor–liquid–solid method. The formation of crystalline TiO2-II films is confirme
Publikováno v:
Advanced Materials Letters. 8:891-896
Publikováno v:
Polymer Engineering & Science. 58:74-85
More or less universally, bis(3-triethoxysilyl propyl) tetrasulfide (TESPT) has been used as a coupling agent during dispersion of silica filler in a virgin nonpolar rubber compound. It is for the first time that TESPT has been used as a devulcanizin
Publikováno v:
UPCommons. Portal del coneixement obert de la UPC
Universitat Politècnica de Catalunya (UPC)
Recercat. Dipósit de la Recerca de Catalunya
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Universitat Politècnica de Catalunya (UPC)
Recercat. Dipósit de la Recerca de Catalunya
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Role of defect states of thermally evaporated molybdenum trioxide (MoO3-x) on electrical conductivity was investigated via low temperature current–voltage and capacitance–voltage measurements. To clarify the charge transport phenomena through MoO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c1fe1286c3b4a25b977ee79e760f3069
https://hdl.handle.net/2117/125867
https://hdl.handle.net/2117/125867
Autor:
Avishek Das, Satyaban Bhunia, Anupam Karmakar, Sanatan Chattopadhyay, Somdatta Paul, Mainak Palit
Publikováno v:
Advanced Materials Letters. 7:610-615
In this work, a comparative performance analysis of ZnO nanowires grown by following single- and double-step techniques on (100) p-Si substrate has been conducted. High-quality ZnO nanowires with c-axis orientation and perfect crystalline structures