Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Satu Ek"'
Publikováno v:
Beilstein Journal of Nanotechnology, Vol 9, Iss 1, Pp 890-899 (2018)
In this work, we investigate the effect of thermal treatment on CeO2 films fabricated by using atomic layer deposition (ALD) on titanium nitride (TiN) or on silicon (Si) substrates. In particular, we report on the structural, chemical and morphologic
Externí odkaz:
https://doaj.org/article/b1c7630648114d29a1992ed7aff863c3
Autor:
Lioubov Kiwi-Minsker, Satu Ek, Charline Berguerand, Linda Zh. Nikoshvili, Ralf Zapf, Thomas H. Rehm, Patrick Löb
Publikováno v:
Chemical Engineering Journal. 293:345-354
Despite significant advances in the fabrication and applications of microreactors for production of chemicals, their use for catalytic reactions remains a challenge, especially in fine chemical synthesis where the selectivity towards the desired prod
Publikováno v:
Beilstein journal of nanotechnology 9 (2018): 890–899. doi:10.3762/bjnano.9.83
info:cnr-pdr/source/autori:Vangelista, Silvia; Piagge, Rossella; Ek, Satu; Lamperti, Alessio/titolo:Effect of annealing treatments on CeO2 grown on TiN and Si substrates by atomic layer deposition/doi:10.3762%2Fbjnano.9.83/rivista:Beilstein journal of nanotechnology/anno:2018/pagina_da:890/pagina_a:899/intervallo_pagine:890–899/volume:9
Beilstein Journal of Nanotechnology, Vol 9, Iss 1, Pp 890-899 (2018)
info:cnr-pdr/source/autori:Vangelista, Silvia; Piagge, Rossella; Ek, Satu; Lamperti, Alessio/titolo:Effect of annealing treatments on CeO2 grown on TiN and Si substrates by atomic layer deposition/doi:10.3762%2Fbjnano.9.83/rivista:Beilstein journal of nanotechnology/anno:2018/pagina_da:890/pagina_a:899/intervallo_pagine:890–899/volume:9
Beilstein Journal of Nanotechnology, Vol 9, Iss 1, Pp 890-899 (2018)
In this work, we investigate the effect of thermal treatment on CeO2 films fabricated by using atomic layer deposition (ALD) on titanium nitride (TiN) or on silicon (Si) substrates. In particular, we report on the structural, chemical and morphologic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::49dac77df597681013e99af72567354f
http://www.cnr.it/prodotto/i/431695
http://www.cnr.it/prodotto/i/431695
Publikováno v:
Beilstein Journal of Nanotechnology
In this work, we investigate the effect of thermal treatment on CeO2 films fabricated by using atomic layer deposition (ALD) on titanium nitride (TiN) or on silicon (Si) substrates. In particular, we report on the structural, chemical and morphologic
Autor:
Erik Ostreng, Oili Ylivaara, Paivi Jarvinen, Riina Ritasalo, Satu Ek, Mikko Matvejeff, Jesse Kalliomaki
Publikováno v:
Matvejeff, M, Ek, S, Ritasalo, R, Kalliomäki, J, Järvinen, P, Ylivaara, O & Östreng, E 2017, Biocompatible ALD barrier coatings for medical devices . in Proceedings of 2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM) ., 7947504, IEEE Institute of Electrical and Electronic Engineers, pp. 56-58, Electron Devices Technology and Manufacturing Coneference, EDTM 2017, Toyama, Japan, 28/02/17 . https://doi.org/10.1109/EDTM.2017.7947504
Atomic layer deposition (ALD) is widely in use for depositing a variety of materials, such as metal oxides, metal nitrides and metals, in a conformal and defect-free form at low temperatures on high aspect-ratio substrates. These advantages make ALD
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ce0ca4ebb097da1c8ca03dd5919b2aee
https://cris.vtt.fi/en/publications/5e72ed2c-fa7d-40fe-a9db-84cac4df59c3
https://cris.vtt.fi/en/publications/5e72ed2c-fa7d-40fe-a9db-84cac4df59c3
Publikováno v:
MRS Advances 2 (2017): 3005–3010. doi:10.1557/adv.2017.404
info:cnr-pdr/source/autori:Vangelista, Silvia; Piagge, Rossella; Ek, Satu; Sarnet, Tiina; Ghidini, Gabriella; Lamperti, Alessio/titolo:Atomic Layer Deposition of Cerium Dioxide Film on TiN and Si Substrates: Structural and Chemical Properties/doi:10.1557%2Fadv.2017.404/rivista:MRS Advances/anno:2017/pagina_da:3005/pagina_a:3010/intervallo_pagine:3005–3010/volume:2
info:cnr-pdr/source/autori:Vangelista, Silvia; Piagge, Rossella; Ek, Satu; Sarnet, Tiina; Ghidini, Gabriella; Lamperti, Alessio/titolo:Atomic Layer Deposition of Cerium Dioxide Film on TiN and Si Substrates: Structural and Chemical Properties/doi:10.1557%2Fadv.2017.404/rivista:MRS Advances/anno:2017/pagina_da:3005/pagina_a:3010/intervallo_pagine:3005–3010/volume:2
Cerium dioxide (CeO2) thin films were deposited by atomic layer deposition (ALD) on both Si and TiN substrates. The ALD growth produces CeO2 cubic polycrystalline films on both substrates. However, the films show a preferential orientation along crys
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ddff39f7399f47ce1513392e146a533f
https://publications.cnr.it/doc/431701
https://publications.cnr.it/doc/431701
Publikováno v:
The Journal of Physical Chemistry B. 108:11454-11463
The aim of the present solid-state NMR study was to characterize the surface species of γ-aminopropyltriethoxysilane (APTS), γ-aminopropyltrimethoxysilane (APTMS), and γ-aminopropyldiethoxymethylsilane (APDMS) on porous silica when the deposition
Publikováno v:
The Journal of Physical Chemistry B. 108:9650-9655
Atomic layer deposition (ALD) technique can be used for the preparation of amino-functionalized silica surfaces and for the study of the gas−solid reactions. In the present study N-(2-aminoethyl)-3-aminopropyltrimethoxysilane (AAPS) was used as a s
Autor:
Satu Ek, Tuula Pakkanen, Jetta Keränen, Eero I. Iiskola, Lauri Niinistö, Aline Auroux, Jari Vaittinen
Publikováno v:
Langmuir. 19:10601-10609
A novel gas-phase procedure for the control of amino group density on porous silica through consecutive reactions of aminopropylalkoxysilanes and water vapor was developed. First heat-treated silica was saturated with trifunctional γ-aminopropyltrim
Publikováno v:
Applied Catalysis A: General. 228:213-225
A gas phase preparation technique, atomic layer deposition (ALD), was applied to synthesize supported vanadium oxide catalysts. The growth of vanadia on silica and alumina was achieved by chemisorption of the volatilized vanadium precursor onto surfa