Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Satoshi Taniyama"'
Publikováno v:
Journal of Physics and Chemistry of Solids. 70:1156-1165
We investigated the relationship between the average and local crystal structures and the ferroelectric properties of Bi 2 SiO 5 , Bi 4 Si 3 O 12 , or Bi 2 O 3 added Sr 1− x Bi 2+ x Ta 2 O 9 ( x =0, 0.2) produced by a solid-state reaction. By measu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a198c07b39821c6df5f1ea0b28df8b1
https://doi.org/10.1016/j.jpcs.2009.06.017
https://doi.org/10.1016/j.jpcs.2009.06.017
Publikováno v:
Ferroelectrics. 355:90-95
We investigated crystal structure and ferroelectric properties of bismuth layered-structure compounds prepared by alloying Ce substituted Sr 1− x Ce x Bi 2 Ta 2 O 9 (SCBT) with Bi 3 Si 4 O 12 (BSO) using a solid state reaction method. From the P-E
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bdab594c812f6926a18e7d752307b31e
https://doi.org/10.1080/00150190701516095
https://doi.org/10.1080/00150190701516095
Autor:
I. Regolin, Takao Waho, Gregor Keller, Werner Prost, Andrey Lysov, Ryosuke Oda, Benjamin Munstermann, Satoshi Taniyama, Rene Richter, K. Blekker, O. Benner
We report on the fabrication and analysis of basic digital circuits containing InAs nanowire transistors on a host substrate. The nanowires were assembled at predefined positions by means of electric field-assisted self-assembly within each run gener
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b09e39391889fba31c33782a2e684fbe
https://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&origin=inward&scp=84864543094
https://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&origin=inward&scp=84864543094
