Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Satoshi TAZAWA"'
Autor:
Satoshi Nagai, Sirje Sildever, Noriko Nishi, Satoshi Tazawa, Leila Basti, Takanori Kobayashi, Yoshizumi Ishino
Publikováno v:
Metabarcoding and Metagenomics, Vol 6, Iss , Pp 27-39 (2022)
Accuracy of PCR amplification is vital for obtaining reliable amplicon-sequencing results by metabarcoding. Here, we performed a comparative analysis of error profiles in the PCR products by 14 different PCR kits using a mock eukaryotic community DNA
Externí odkaz:
https://doaj.org/article/da63cc4383144e038f00ac0e93574229
Autor:
Kyoko Yarimizu, Jorge I. Mardones, Yoko Hamamoto, Leila Basti, Javier Paredes-Mella, Haruo Yamaguchi, Sirje Sildever, Hiroshi Oikawa, Satoshi Tazawa, Satoshi Nagai
Publikováno v:
Harmful algae. 103
Recent increase of Harmful Algal Blooms (HAB) causes world-wide ecological, economical, and health issues, and more attention is paid to frequent coastal monitoring for the early detection of HAB species to prevent or reduce such impacts. Use of mole
Publikováno v:
Journal of Japan Society of Civil Engineers, Ser. G (Environmental Research). 77:I_341-I_348
Publikováno v:
Catalysis Today. 164:163-168
Catalytic and direct synthesis of a neutral hydrogen peroxide solution from O2 and H2 was studied using a new conceptual PEMFC reactor with a new active cathode. A particular electrocatalyst of Co-TPP/vapor-grown-carbon-fiber (VGCF) heat-treated in H
Publikováno v:
Journal of Applied Physics. 86:2330-2333
We found that thermal oxidation of (001)-oriented Czochralski silicon produces oxide ridges which surround the oxide pits above the grown-in defects (or octahedral void defects), whereas thermal oxidation of (111)-oriented Czochralski silicon produce
Publikováno v:
ChemSusChem. 3(1)
Publikováno v:
ChemSusChem. 1:957-957
Publikováno v:
Journal of The Electrochemical Society. 132:680-684
Mesure du potentiel a l'aide d'un transistor MOS a effet de champ. Les electrons secondaires emis par les electrodes de la couche de SiO 2 implantee abaissent le potentiel. La distribution du potentiel est trapezoidale. Le potentiel depend legerement
Publikováno v:
Electronics and Communications in Japan (Part II: Electronics). 68:86-93
We propose a process evaluation method using channel-doped MOS devices and process/device simulators for quantitative evaluation of contamination and surface condition. The amount of contamination is determined by comparison of the measured and simul