Zobrazeno 1 - 10
of 50
pro vyhledávání: '"Satoshi Shindo"'
Autor:
Satoshi Shindo, Yi Shuang, Shogo Hatayama, Yuta Saito, Fons, Paul, Kolobov, Alexander V., Keisuke Kobayashi, Yuji Sutou
Publikováno v:
Journal of Applied Physics; 10/28/2020, Vol. 128 Issue 16, p165105-1-165105-10, 10p
Autor:
Alexander V. Kolobov, Daisuke Ando, Yuji Sutou, Shogo Hatayama, Paul Fons, Keisuke Kobayashi, Yi Shuang, Satoshi Shindo, Yuta Saito
Publikováno v:
ACS Applied Materials & Interfaces. 11:43320-43329
Cr2Ge2Te6 (CrGT) is a phase change material with higher resistivity in the crystalline phase than in the amorphous phase. CrGT exhibits an ultralow operation energy for amorphization. In this study, the origin of the increased resistance in crystalli
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de90a96d346a71545dc669aa5bb2c769
https://doi.org/10.1021/acsami.9b11535
https://doi.org/10.1021/acsami.9b11535
Autor:
Daisuke Ando, Shogo Hatayama, Yun-Heub Song, Junichi Koike, Yuta Saito, Yuji Sutou, Satoshi Shindo
Publikováno v:
ACS Applied Materials & Interfaces. 10:2725-2734
Phase-change random access memory (PCRAM) has attracted much attention for next-generation nonvolatile memory that can replace flash memory and can be used for storage-class memory. Generally, PCRAM relies on the change in the electrical resistance o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::57d52855971a6f30ee7618d222bd0260
https://doi.org/10.1021/acsami.7b16755
https://doi.org/10.1021/acsami.7b16755
Autor:
Yuta Saito, Keisuke Kobayashi, Satoshi Shindo, Xeniya Kozina, Alexander V. Kolobov, Paul Fons, Yuji Sutou, Jonathan M. Skelton
Publikováno v:
Chemistry of Materials. 29:7440-7449
The electronic structure of the as-deposited amorphous and crystalline phases of the transition-metal based Cu2GeTe3 phase-change material has been systematically investigated using hard-X-ray photoemission spectroscopy and density-functional theory
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b65f049bddf2b02510565cf1086f31d4
https://doi.org/10.1021/acs.chemmater.7b02436
https://doi.org/10.1021/acs.chemmater.7b02436
Autor:
Shogo, Hatayama, Yi, Shuang, Paul, Fons, Yuta, Saito, Alexander V, Kolobov, Keisuke, Kobayashi, Satoshi, Shindo, Daisuke, Ando, Yuji, Sutou
Publikováno v:
ACS applied materialsinterfaces. 11(46)
Cr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::951562c6f367edfe61bc3e634069e0a9
https://pubmed.ncbi.nlm.nih.gov/31647631
https://pubmed.ncbi.nlm.nih.gov/31647631
Autor:
Eiichi Fujino, Noboru Nakamura, Satoshi Shindo, Yasuyuki Sano, Ken-ichi Sugimoto, Takahisa Kamada, Seiichiro Ukyo, Masaya Gonda
Publikováno v:
Mokuzai Gakkaishi. 63:98-107
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::056f200ac01267a8058e68bfb8b6b551
https://doi.org/10.2488/jwrs.63.98
https://doi.org/10.2488/jwrs.63.98
Publikováno v:
Journal of Computational Electronics. 15:1570-1576
This paper investigates the impact of contact resistance on the memory window in phase-change random access memories (PCRAMs) using $$\hbox {Ge}_{2}\hbox {Se}_{2}\hbox {Te}_{5}$$Ge2Se2Te5 (GST). We discuss the increase of contact resistance, as devic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c6976dc1daec3e40d1f15eba7c02ac34
https://doi.org/10.1007/s10825-016-0905-3
https://doi.org/10.1007/s10825-016-0905-3
Publikováno v:
Materials Science in Semiconductor Processing. 47:1-6
We have investigated the contact resistivity of GeCu2Te3 (GCT) phase change material to a W electrode using the circular transfer length method (CTLM). The contact resistivity ρc of as-deposited amorphous GCT to W was 3.9×10−2 Ω cm2. The value o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::926fb7f14873975ed2c3b218f3809b39
https://doi.org/10.1016/j.mssp.2016.02.006
https://doi.org/10.1016/j.mssp.2016.02.006
Publikováno v:
MRS Advances. 1:2731-2736
The contact resistivity, ρ c, between phase change material (PCM) and an electrode plays an important role in the operation of highly scaled phase change random access memory (PCRAM). We investigated the effect of surface cleaning on the ρ c betwee
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d8a98011454d6081f11ef20c383ca05
https://doi.org/10.1557/adv.2016.310
https://doi.org/10.1557/adv.2016.310
Autor:
Keisuke Kobayashi, Yi Shuang, Yuta Saito, Alexander V. Kolobov, Satoshi Shindo, Shogo Hatayama, Yuji Sutou, Paul Fons
Publikováno v:
Journal of Applied Physics. 128:165105
Cu2GeTe3 (CGT) is a promising phase change material for phase change random access memory (PCRAM) applications because of its high thermal stability in the amorphous phase and its capability to undergo rapid phase change. In this paper, the electrica
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da564a87364a25a24d974f9cb5b9a981
https://doi.org/10.1063/5.0019269
https://doi.org/10.1063/5.0019269