Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Satoshi Shimonishi"'
Publikováno v:
Japanese Journal of Applied Physics. 57:098004
A Si deep-trench etching process using HBr/SF6/O2 plasma was studied. It was found that when the hole trench width was decreased from 190 to 140 nm, erosions at the topmost part of the Si hole sidewall were observed at an incidence of 10 ppm, which w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a624eb2d34defb9c5975cf5093b19bf3
https://doi.org/10.7567/jjap.57.098004
https://doi.org/10.7567/jjap.57.098004
Autor:
Kazuyoshi Sugihara, Masayuki Hatano, Shuichi Taniguchi, Hisataka Hayashi, Ichiro Mizushima, Tsutomu Sato, Satoshi Shimonishi, Yoshitaka Tsunashima, Keiichi Takenaka
Publikováno v:
Japanese Journal of Applied Physics. 43:12-18
A practical method for the fabrication of a silicon on nothing (SON) structure with the desired size and shape has been developed by using the empty-space-in-silicon (ESS) formation technique. It was found that the SON structure could be precisely co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::06e691527f80a143bc721cafe3fb878a
https://doi.org/10.1143/jjap.43.12
https://doi.org/10.1143/jjap.43.12
Publikováno v:
Japanese Journal of Applied Physics; Sep2018, Vol. 57 Issue 9, p1-1, 1p
Akademický článek
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