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Autor:
Kunihiko Maejima, Satoshi Ooue, Hiroshige Matsumoto, Takahiro Orita, Yoshimine Kato, Yan Li, Kensuke Nakashima, Hiroshi Inokuchi
Publikováno v:
Journal of Materials Science: Materials in Electronics. 30:6693-6700
In this work, p- and n-type Si pastes were prepared in a way by utilizing a planetary ball miller to pulverize Si source material. pn homojunction was formed by coating Si pastes onto metal substrates, followed by annealing under Ar or Ar + H2 atmosp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f39f61e820c25c026feabb272f0a734
https://doi.org/10.1007/s10854-019-00980-3
https://doi.org/10.1007/s10854-019-00980-3
