Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Satoshi Mitomo"'
Autor:
Takuma Matsuda, Satoshi Mitomo, Koichi Murata, Hiroshi Abe, Takeshi Ohshima, Mikio Kandori, Yasuto Hijikata, Shinobu Onoda, Akinori Takeyama, Yuki Tanaka, Takahiro Makino, Toru Yoshie, Takashi Yokoseki
Publikováno v:
Materials Science Forum. 858:860-863
Radiation response of 4H-SiC vertical power Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) was investigated at 150°C up to 10.4 MGy. Until irradiation at 1.2 MGy, the drain current – gate voltage curves of the SiC MOSFETs shifted to
Autor:
Yasuyoshi Kaneko, Koichi Murata, Akinori Takeyama, Takashi Yokozeki, Yugo Kobayashi, Michihiro Hachisuka, Toru Yoshie, Mikio Kandori, Takuma Matsuda, Shinobu Onoda, Yasuto Hijikata, Satoshi Mitomo, Takahiro Makino, Takeshi Ohshima, Yuki Tanaka
Publikováno v:
Materials Science Forum. 858:868-871
Gamma-ray irradiation effects on motor-driver circuits composed of 4H-SiC Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) under motor driving with different Pulse-Width-Modulation (PWM) frequencies were investigated. In the case of PWM f
Autor:
Yasuto Hijikata, Takeshi Ohshima, Toru Yoshie, Shinobu Onoda, Mikio Kandori, Takahiro Makino, Satoshi Mitomo, Yuki Tanaka, Takashi Yokoseki, Akinori Takeyama, Takuma Matsuda, Shuichi Okubo, Koichi Murata
Publikováno v:
physica status solidi (a). 214:1600425
Autor:
Mikio Kandori, Yuki Tanaka, Takeshi Ohshima, Shinobu Onoda, Takahiro Makino, Takuma Matsuda, Takashi Yokoseki, Koichi Murata, Akinori Takeyama, Toru Yoshie, Shuichi Okubo, Satoshi Mitomo, Yasuto Hijikata
Publikováno v:
physica status solidi (a). 214:1600446
Gamma-ray irradiation into vertical type n-channel hexagonal (4H)-silicon carbide (SiC) metal-oxide-semiconductor field effect transistors (MOSFETs) was performed under various gate biases. The threshold voltage for the MOSFETs irradiated with a cons
Autor:
Akinori Takeyama, Takashi Yokoseki, Shuichi Okubo, Shinobu Onoda, Yasuto Hijikata, Koichi Murata, Takuma Matsuda, Takeshi Ohshima, Mikio Kandori, Satoshi Mitomo, Takahiro Makino, Toru Yoshie, Yuki Tanaka
Publikováno v:
Japanese Journal of Applied Physics. 55:104101
The response of hexagonal (4H) silicon carbide (SiC) power metal–oxide–semiconductor field effect transistors (MOSFETs) to gamma-ray irradiation was investigated under elevated temperature and humid conditions. The shift in drain current–gate v
Autor:
Shuichi Okubo, Takahiro Makino, Hiroshi Abe, Takeshi Ohshima, Mikio Kandori, Takuma Matsuda, Takashi Yokoseki, Toru Yoshie, Yuki Tanaka, Satoshi Mitomo, Yasuto Hijikata, Shinobu Onoda, Koichi Murata
Publikováno v:
Japanese Journal of Applied Physics. 55:01AD01
Radiation response of vertical structure hexagonal (4H) silicon carbide (SiC) power metal–oxide–semiconductor field effect transistors (MOSFETs) was investigated up to 5.8 MGy. The drain current–gate voltage curves for the MOSFETs shifted from