Zobrazeno 1 - 10
of 64
pro vyhledávání: '"Satoshi Kokado"'
Publikováno v:
AIP Advances, Vol 7, Iss 5, Pp 056416-056416-6 (2017)
The anisotropic magnetoresistance (AMR) effect and the anomalous Hall effect (AHE) were investigated in the temperature range of 5–300 K for a pseudo-single-crystal Mn4N thin film. The sign of the AMR ratio changed from positive to negative when th
Externí odkaz:
https://doaj.org/article/f497903aa36b42b7a6ddf13a205b965c
Publikováno v:
AIP Advances, Vol 6, Iss 5, Pp 055818-055818-5 (2016)
Transverse anisotropic magnetoresistance (AMR) effects, for which magnetization is rotated in an orthogonal plane to the current direction, were investigated at various temperatures, in order to clarify the structural transformation from a cubic to a
Externí odkaz:
https://doaj.org/article/4e3f8c55bb444cf888ed5c1913c4944d
Publikováno v:
AIP Advances, Vol 6, Iss 5, Pp 055801-055801-5 (2016)
The anomalous Hall effects (AHE) were investigated at various temperatures for the pseudo-single-crystal Fe4N films, deposited on MgO substrates with changing the degree of order (S) of the nitrogen site. Both the anomalous Hall resistivity and the l
Externí odkaz:
https://doaj.org/article/be64df0c0ffd49b1a545e34568889892
Autor:
Satoshi Kokado, Masakiyo Tsunoda
Publikováno v:
Materials Today: Proceedings. 33:1864-1868
We derive an expression of the anisotropic magnetoresistance (AMR) ratio for weak ferromagnets with a crystal field of tetragonal symmetry using the electron scattering theory. This theory is based on the two-current model consisting of a conduction
Autor:
Satoshi Kokado, Masakiyo Tsunoda
We develop a theory of the anisotropic magnetoresistance (AMR) effects of arbitrary directions of current and magnetization for ferromagnets. Here, we use the electron scattering theory with the $s$--$s$ and $s$--$d$ scattering processes, where $s$ i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e59aefd127079f45ada81daf541a697a
http://arxiv.org/abs/2202.02810
http://arxiv.org/abs/2202.02810
Autor:
Jian Wu, Zhong Sun, Pengfei Zhang, Minghua Guo, Aitian Chen, Yayu Wang, Satoshi Kokado, Ping Zheng, Diyang Zhao, Fu-kuo Chiang, Jianlin Luo, Jianqi Li, Yonggang Zhao, Shuang Qiao, Yuxiang Luo
Publikováno v:
ACS Applied Materials & Interfaces. 9:10835-10846
The resistive switching (RS) effect in various materials has attracted much attention due to its interesting physics and potential for applications. NiO is an important system and its RS effect has been generally explained by the formation/rupture of
Autor:
Satoshi Kokado, Masakiyo Tsunoda
Publikováno v:
Spintronics XI.
The anisotropic magnetoresistance (AMR) effect is a fundamental phenomenon in which the electrical resistivity depends on the relative angle between the magnetization direction and the electric current direction. The efficiency of the effect ``AMR ra
Autor:
Satoshi Kokado, Masakiyo Tsunoda
Publikováno v:
Journal of the Physical Society of Japan. 86
Autor:
Satoshi Kokado, Masakiyo Tsunoda
Publikováno v:
physica status solidi c. 14
Autor:
Satoshi Kokado, Masakiyo Tsunoda
Publikováno v:
physica status solidi c. 11:1026-1032
We theoretically study magnetization direction dependence of the anisotropic magnetoresistance (AMR) effect of a strong ferromagnet. We here use the two-current model which takes into account the s –d scattering, where s (d) is the conduction state