Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Satoshi Katsumata"'
Autor:
Kengo Nagata, Taichi Matsubara, Yoshiki Saito, Keita Kataoka, Tetsuo Narita, Kayo Horibuchi, Maki Kushimoto, Shigekazu Tomai, Satoshi Katsumata, Yoshio Honda, Tetsuya Takeuchi, Hiroshi Amano
Publikováno v:
Crystals, Vol 13, Iss 3, p 524 (2023)
Conventional deep-ultraviolet (UV) light-emitting diodes (LEDs) based on AlGaN crystals have extremely low light-emission efficiencies due to the absorption in p-type GaN anode contacts. UV-light-transparent anode structures are considered as one of
Externí odkaz:
https://doaj.org/article/e06ef7dbabbb4438b4e0a78081bac773
Publikováno v:
Process Biochemistry. 128:22-29
Autor:
Kengo Nagata, Taichi Matsubara, Yoshiki Saito, Keita Kataoka, Tetsuo Narita, Kayo Horibuchi, Maki Kushimoto, Shigekazu Tomai, Satoshi Katsumata, Yoshio Honda, Tetsuya Takeuchi, Hiroshi Amano
Deep-ultraviolet (UV) light-emitting diodes (LEDs) based on AlGaN crystals have low light-emission efficiency; therefore, there is a need to improve this light-emission efficiency for a wide range of applications such as water and air sterilizations.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c92c4c3c67f39e246d9d343d4c096b20
https://doi.org/10.20944/preprints202302.0249.v2
https://doi.org/10.20944/preprints202302.0249.v2
Autor:
Taichi Matsubara, Kengo Nagata, Maki Kushimoto, Shigekazu Tomai, Satoshi Katsumata, Yoshio Honda, Hiroshi Amano
Publikováno v:
Applied Physics Express. 15:044001
In this study, we enhanced the emission power of AlGaN-based tunnel junction deep-ultraviolet LEDs (TJ LEDs) by using a MgZnO and aluminum stacked structure as UV reflective electrodes on the anode side. The emission wavelength of the fabricated TJ L
Publikováno v:
Diamond and Related Materials. 3:1296-1300
Selective seeding for growing diamond on Si substrates was performed by conventional lithography using photoresist mixed with fine diamond particles. The selectivity was improved by filtering the diamond powder-photoresist mixture and carrying out re
Autor:
Shigemi Yugo, Satoshi Katsumata
Publikováno v:
Diamond and Related Materials. 2:1490-1492
Selective nucleation and deposition of diamonds were achieved on an SiO 2 -patterned Si substrate. The substrate was pre-treated with an electric field in plasma to introduce diamond nuclei. This treatment did not affect the SiO 2 area. Consequently,
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 13:431
Diamond grains were grown on Si substrates by plasma‐enhanced chemical vapor deposition. Ar ion milling was applied to the diamond/Si structures. It has been found that sharp diamond cones can be formed by ion milling if diamonds are in the form of
Autor:
Satoshi Katsumata
Publikováno v:
Japanese Journal of Applied Physics. 31:3594
Cathodoluminescence (CL) spectra and images of an epitaxial diamond layer grown by microwave plasma-assisted chemical vapor deposition (CVD) on high-pressure synthetic (HP) diamond were measured. The epitaxial layer was grown using carbon monoxide (C
Autor:
Satoshi Katsumata
Publikováno v:
Japanese Journal of Applied Physics. 31:868
High-quality diamond was obtained by the microwave plasma-assisted chemical vapor deposition (plasma CVD) method using the pretreated carbon dioxide (CO2) and hydrogen (H2) mixed-gas system. The pretreatment method is as follows: at first, CO2 and H2
Conference
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.