Zobrazeno 1 - 10
of 191
pro vyhledávání: '"Satoru Yoshimura"'
Publikováno v:
AIP Advances, Vol 14, Iss 9, Pp 095308-095308-7 (2024)
In this study, we conducted an experiment in which a source material was sprayed onto a substrate with simultaneous N+ ion beam injections. Hexamethyldisiloxane (HMDSO) or tetraethyl orthosilicate (TEOS) was used as a source material. The energy of N
Externí odkaz:
https://doaj.org/article/0452c093c484400baf088ddc26f5b106
Publikováno v:
AIP Advances, Vol 13, Iss 11, Pp 115107-115107-6 (2023)
We attempted to deposit silicon oxide films by spraying tetraethyl orthosilicate (TEOS) onto a substrate while the substrate was also irradiated with a low-energy SiO+ ion beam. The energy of the SiO+ ions was 55 eV, and the substrate temperature was
Externí odkaz:
https://doaj.org/article/555cbe2b16b84ab5b2ad5e230150d47b
Publikováno v:
Heliyon, Vol 9, Iss 8, Pp e19002- (2023)
We found that the atomic-concentration-ratio of carbon to silicon (C/Si ratio) in silicon carbide (SiC) films formed by thermal chemical vapor deposition (CVD) was much greater than 1 when the source gas for CVD was dimethylsilane (DMS). Thus, we tri
Externí odkaz:
https://doaj.org/article/dd1154c08dd24891be48a52754edd4d0
Publikováno v:
Heliyon, Vol 9, Iss 4, Pp e14643- (2023)
This study was conducted to determine whether the simultaneous injections of Ar+ ions and tetraethyl orthosilicate (TEOS) to a substrate are able to fabricate a film on the substrate. The Ar+ ion energy was 100 eV. After the injections, we found a fi
Externí odkaz:
https://doaj.org/article/ede5b5f7f0e646348b8715a5a9819350
Publikováno v:
AIP Advances, Vol 12, Iss 11, Pp 115104-115104-7 (2022)
Silicon carbide (SiC) films produced on Si substrates by the thermal chemical vapor deposition (CVD) method using methylsilane (MS) were compared with those made by the mass-selected ion-beam deposition (MSIBD) method using MS-derived 100 eV SiCH5+ i
Externí odkaz:
https://doaj.org/article/2a48e29cfe93452b8a4040c4a2ef0764
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-8 (2021)
Abstract (Bi1−xLax)(Fe,Co)O3 multiferroic magnetic film were fabricated using pulsed DC (direct current) sputtering technique and demonstrated magnetization reversal by applied electric field. The fabricated (Bi0.41La0.59)(Fe0.75Co0.25)O3 films exh
Externí odkaz:
https://doaj.org/article/84382a5384fd4bf1af6b47165ae221c4
Publikováno v:
AIP Advances, Vol 11, Iss 12, Pp 125328-125328-6 (2021)
A methodology for silicon dioxide (SiO2) film formation by an ion beam induced chemical vapor deposition (IBICVD) method using hexamethyldisilane (HMDS) or hexamethyldisilazane (HMDSN) is presented in this paper. In this method, an O+ ion beam was in
Externí odkaz:
https://doaj.org/article/901231d16f8e4f27803d09a634487ca5
Publikováno v:
PLoS ONE, Vol 16, Iss 10 (2021)
We proposed an experimental methodology for producing films on substrates with an ion beam induced chemical vapor deposition (IBICVD) method using hexamethyldisilazane (HMDS) as a source material. In this study, both HMDS and ion beam were simultaneo
Externí odkaz:
https://doaj.org/article/8d810019373e4833928b209f3d68ea73
Publikováno v:
PLoS ONE, Vol 16, Iss 6, p e0253870 (2021)
Tetramethyltin was decomposed in an ion source and the fragment ions produced were identified using a low-energy mass-selected ion beam machine. Dominant fragment ions were found to be H+, CH2+, and Sn+. Subsequently, fragment ions were mass-selected
Externí odkaz:
https://doaj.org/article/656333677c0246b182ef1fa2be03b0b1
Publikováno v:
AIP Advances, Vol 9, Iss 9, Pp 095051-095051-4 (2019)
Methylsilane-derived fragment ions obtained from a Bernas-type ion source were investigated using a low-energy mass-selected ion beam system. Based on mass-energy analyzer measurements, these ions were determined to be H+, H2+, H3+, CH3+, Si+, and Si
Externí odkaz:
https://doaj.org/article/cc598c190a244d3cb8b0471add8bb13c