Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Satoru Ohshita"'
Autor:
Hitoshi Kunitake, Kazuaki Ohshima, Kazuki Tsuda, Noriko Matsumoto, Tatsuki Koshida, Satoru Ohshita, Hiromi Sawai, Yuichi Yanagisawa, Shiori Saga, Ryo Arasawa, Takako Seki, Ryunosuke Honda, Haruyuki Baba, Daigo Shimada, Hajime Kimura, Ryo Tokumaru, Tomoaki Atsumi, Kiyoshi Kato, Shunpei Yamazaki
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 495-502 (2019)
We fabricated a field-effect transistor (FET) with a gate length of 21 nm whose channel material is a c-axis-aligned crystalline In-Ga-Zn oxide (CAAC-IGZO). A CAAC-IGZO FET with a gate length of 21 nm has an extremely low off-state leakage current, a
Externí odkaz:
https://doaj.org/article/3b4a197508f54d028b2b33ddeb7df132
Autor:
Haruyuki Baba, Tomoaki Atsumi, Tatsuya Onuki, Hitoshi Kunitake, Kazuaki Ohshima, Shunpei Yamazaki, Hajime Kimura, Kiyoshi Kato, Satoru Ohshita, Masashi Oota, Tsutomu Murakawa, Daigo Shimada
Publikováno v:
International Journal of Ceramic Engineering & Science. 1:6-20
Autor:
Shiori Saga, Shunpei Yamazaki, Daigo Shimada, Hitoshi Kunitake, Yuichi Yanagisawa, Honda Ryunosuke, Tatsuki Koshida, Satoru Ohshita, Ryo Arasawa, Kazuki Tsuda, Takako Seki, Haruyuki Baba, Hajime Kimura, Tomoaki Atsumi, Kiyoshi Kato, Noriko Matsumoto, Hiromi Sawai, Kazuaki Ohshima, Ryo Tokumaru
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 495-502 (2019)
We fabricated a field-effect transistor (FET) with a gate length of 21 nm whose channel material is a ${c}$ -axis-aligned crystalline In-Ga-Zn oxide (CAAC-IGZO). A CAAC-IGZO FET with a gate length of 21 nm has an extremely low off-state leakage curre
Autor:
Satoru Ohshita, N. Matsumoto, Hitoshi Kunitake, T. Nakura, Tomoaki Atsumi, Kazuki Tsuda, S. Yamazaki, K. Kato, Y. Okazaki, Tsutomu Murakawa, Kazuaki Ohshima, Tatsuki Koshida
Publikováno v:
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials.
Autor:
N. Ishihara, Tomoaki Atsumi, Hitoshi Kunitake, D. Chen, C.M. Lai, Shiori Saga, Y. Narusawa, Honda Ryunosuke, S. Yamazaki, K. Kato, M. Kurata, Satoru Ohshita
Publikováno v:
Extended Abstracts of the 2018 International Conference on Solid State Devices and Materials.
Autor:
Shuhei Maeda, Satoru Ohshita, Masahiro Fujita, Shunpei Yamazaki, Yuto Yakubo, Takashi Okuda, Daisuke Matsubayashi, Takahiko Ishizu, Yoshinori Ando, Kazuma Furutani, Tomoaki Atsumi, Kiyoshi Kato
Publikováno v:
ISSCC
Development of LSI targeting artificial intelligence (AI) has accelerated, some chips have been used and are commercially available in a number of applications. LSI capable of performing arithmetic operation for deep learning, etc., at low power and