Zobrazeno 1 - 10
of 22
pro vyhledávání: '"Satoru Kawazu"'
Publikováno v:
Solid-State Electronics. 42:921-924
NH 3 -nitrided oxide has been annealed in NO or O 2 gas at 1000°C for 1 min and the electrical characteristics, charge trapping and time-dependent dielectric breakdown (TDDB) have been studied. It was observed that in the F–N region before stress
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7fb6a0bafacba2872bd922e9c1679d26
https://doi.org/10.1016/s0038-1101(98)00108-7
https://doi.org/10.1016/s0038-1101(98)00108-7
Publikováno v:
Microelectronics Reliability. 37:1521-1524
Wet oxide thicknesses dependence of nitridation effects on electrical characteristics, charge trapping properties and TDDB (Time Dependent Dielectric Breakdown) characteristics have been investigated. It is found that the difference of conduction cur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1424eb071b99c11fd448d534a41aaaf1
https://doi.org/10.1016/s0026-2714(97)00099-1
https://doi.org/10.1016/s0026-2714(97)00099-1
Autor:
Tamotsu Ogata, Yoji Mashiko, Akihiko Yasuoka, M. Sekine, Satoru Kawazu, Hiroshi Koyama, M.K Mazumder, Junichi Mitsuhashi, Kiyoteru Kobayashi
Publikováno v:
Solid-State Electronics. 41:749-755
A nitride film has been oxidized in a wet (O:H = 8:1) ambient or N 2 O atmosphere at different temperatures and times and the electrical characteristics have been studied. It was found that the reliability of MOS capacitors with a wet oxidized nitrid
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::79b5406cbea82cb5947fd5e57a7be631
https://doi.org/10.1016/s0038-1101(96)00217-1
https://doi.org/10.1016/s0038-1101(96)00217-1
Autor:
Satoru Kawazu
Publikováno v:
IEEJ Transactions on Electronics, Information and Systems. 116:399-402
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::590c9fd1277108494ac3dda266b3f779
https://doi.org/10.1541/ieejeiss1987.116.4_399
https://doi.org/10.1541/ieejeiss1987.116.4_399
Autor:
Akinobu Teramoto, M. Sekine, Satoru Kawazu, Kiyoteru Kobayashi, Hidetoshi Koyama, M.K. Mazumder
Publikováno v:
1997 IEEE International Integrated Reliability Workshop Final Report (Cat. No.97TH8319).
Summary form only given. Wet oxides annealed in NO ambient for two different temperatures and degradation due to post N/sub 2/ annealing on the characteristics of p/sup +/ poly MOS capacitors have been investigated. Results show that samples with N/s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e10fcbb7b4cf56aee1eb7c3944ffda3
https://doi.org/10.1109/irws.1997.660311
https://doi.org/10.1109/irws.1997.660311
Autor:
Tatsuya Kunikiyo, Satoru Kawazu, Tomohiro Yamashita, Tetsuya Uchida, Tadashi Nishimura, Akinobu Teramoto, Eiji Tsukuda, Chihiro Hamaguchi, Kiyoshi Ishikawa, Katsumi Eikyu, Masato Fujinaga, Norihiko Kotani
Publikováno v:
Japanese Journal of Applied Physics. 39:2565
Dopant redistribution during gate oxidation in metal-oxide-semiconductor (MOS) fabrication processes has been studied by secondary-ion mass spectrometry (SIMS). In the first set of experiments, dopant profiles after gate oxidation are measured and co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba86021c6d442dc40d470ff7004c301a
https://doi.org/10.1143/jjap.39.2565
https://doi.org/10.1143/jjap.39.2565
Autor:
Hidekazu Yamamoto, Masahiko Ikeno, Masataka Umeno, Yoji Mashiko, Satoru Kawazu, Toshiharu Katayama
Publikováno v:
Japanese Journal of Applied Physics. 38:4172
Thicknesses of both ultrathin silicon oxide on silicon substrate and ultrathin silicon on silicon oxide are accurately determined by angle-resolved X-ray photoelectron spectroscopy (AR-XPS). The effective attenuation lengths of Si 2p photoelectrons i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c677e46cc594478aad5499eb394f7348
https://doi.org/10.1143/jjap.38.4172
https://doi.org/10.1143/jjap.38.4172
Autor:
Satoru Kawazu, Hidekazu Yamamoto, Yoji Mashiko, Hiroshi Koyama, Masataka Umeno, Toshiharu Katayama
Publikováno v:
Japanese Journal of Applied Physics. 38:1547
X-ray photoelectron diffraction fine structure of Si(100) is studied with precise angle-resolved X-ray photoelectron spectroscopy. Polar-angle intensity distributions of the Si 2p photoelectron emission excited by Al Kα X-rays are measured from H-te
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::986fe5eb428fadff6d2cf78e3ef893fe
https://doi.org/10.1143/jjap.38.1547
https://doi.org/10.1143/jjap.38.1547
Publikováno v:
Japanese Journal of Applied Physics. 30:112
We investigate the influence of oxygen concentration and annealing sequence on the microstructure of the SIMOX (separation by implanted oxygen) wafer. Samples with different oxygen contents are compared. Higher oxygen concentration causes higher dens
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::10bf4b33d6389999437277332ff175ee
https://doi.org/10.1143/jjap.30.112
https://doi.org/10.1143/jjap.30.112
Publikováno v:
Electronics and Communications in Japan (Part I: Communications). 63:87-97
With the increase in integration and density of LSI, it has become necessary to control design and fabrication more precisely than before. In particular, for the precise control of the wafer process, a thorough analysis of element characteristics usi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e07e656dd2948ae777f78c9c1ce7a7b8
https://doi.org/10.1002/ecja.4400631212
https://doi.org/10.1002/ecja.4400631212