Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Satish M. Turkane"'
Publikováno v:
2022 International Conference on Emerging Smart Computing and Informatics (ESCI).
Publikováno v:
International Journal of Recent Technology and Engineering. 8:81-84
The issues related to the solid and solvable waste generation and its management has become a serious concern in both the rural and urban areas, as there is a lot of migration of people from rural area to urban area which had leads the population of
Publikováno v:
International Journal of Recent Technology and Engineering (IJRTE). 8:85-88
Body Falls in older adults are the significant cause of injury. Falls incorporate dropping from a standing position or from uncovered positions, for example, those on stepping stools or stepladders. The seriousness of damage is commonly identified wi
Publikováno v:
International Journal of Recent Technology and Engineering (IJRTE). 8:2783-2789
The PI controller design for a liquid level system using the weighted geometric center method is discussed. Every real-time process have dead time. This dead time leads to the generation of oscillation in the system response. The oscillation generate
Publikováno v:
Indian Journal of Science and Technology. 10:1-6
Objective: This paper analyses the performances of Multi Walled Carbon Nanotube (MWCNT), Mixed CNT Bundle (MCB), and Multilayer Graphene Nanoribbon (MLGNR) interconnects incorporated with Carbon Nanotube Field-Effect Transistor (CNFET) and Tunnel Fie
Publikováno v:
Indian Journal of Science and Technology. 10:1-7
Objective: PNPN TFET is a semiconductor device in which the gate controls the source to channel tunneling current through modulation of band-to-band tunneling. Silicon film thickness is also optimized to remove the kink effect. Methods/ Statistical A
Autor:
Satish M. Turkane, A. K. Kureshi
Publikováno v:
International Journal of Electronics. 104:1107-1119
Aluminium was a primary material for interconnection in integrated circuits (ICs) since their inception. Later, copper was introduced as interconnect material which has better metallic conductivity and resistance to electromigration. As the aggressiv
Autor:
Abdul H. Ansari, Satish M. Turkane
Publikováno v:
2018 IEEE Global Conference on Wireless Computing and Networking (GCWCN).
Limitations of MOSFET due to device scaling can be overcome by Tunnel FET that works on Band-to-Band tunneling phenomenon, have sub-threshold swing less than 60mV/dec, low OFF-state leakage current and operate at low voltages. However ITRS requiremen
Autor:
A. K. Kureshi, Satish M. Turkane
Publikováno v:
2018 International Conference On Advances in Communication and Computing Technology (ICACCT).
Paper proposes Johnson counter utilizing pulse latches to build execution parameter of past counter. A Johnson counter is an altered ring counter in which the changed yield from the final flip stoop is related to the contribution to the primary. To d
Autor:
Satish M. Turkane, A. K. Kureshi
Publikováno v:
2016 International Conference on Automatic Control and Dynamic Optimization Techniques (ICACDOT).
Differential amplifiers are essential part of several analog systems. This paper proposes a design of Single Stage Differential Amplifier based on the 32 nm FinFET technologies. We have designed a differential amplifier for certain specifications suc