Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Satish D. Athavale"'
Autor:
Gregory Costrini, J. D. Baniecki, M. Wise, Laertis Economikos, Satish D. Athavale, J. Lian, N. Nagel
Publikováno v:
Integrated Ferroelectrics. 38:259-267
Three dimensional integration of BSTO thin films for Gigabit DRAM application is performed by a MOCVD BST process combined with a high temperature barrier stack of TaSiN/Ir/IrO2 with SiO2 sidewall protection. The SiO2 layer is formed by a new low tem
Autor:
Timothy M. Shaw, Katherine L. Saenger, G. Kunkel, Cyril Cabral, J. Lian, Robert B. Laibowitz, J. D. Baniecki, Yandong Wang, H. Shen, P. R. Duncombe, M. Gutsche, David E. Kotecki, Richard Wise, Satish D. Athavale, Young-Jin Park
Publikováno v:
IBM Journal of Research and Development. 43:367-382
Thin films of barium-strontium titanate (Ba,Sr)TiO3 (BSTO) have been investigated for use as a capacitor dielectric for future generations of dynamic random-access memory (DRAM). This paper describes progress made in the preparation of BSTO films by
Autor:
Wei-Kan Chu, Demetre J. Economou, Sri Prakash Rangarajan, Zongshuang Zheng, Satish D. Athavale, Jiarui Liu, David M. Hoffman
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 14:306-311
Nearly stoichiometric aluminum and gallium nitride thin films were prepared from hexakis(dimethylamido)dimetal complexes, M2[N(CH3)2]6 (M=Al,Ga), and ammonia at substrate temperatures as low as 200 °C by using low pressure thermal and plasma enhance
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 13:966-971
A molecular dynamics study of 50 eV Ar+ ion bombardment of a Si(100) crystal with a monolayer of adsorbed chlorine was conducted to simulate atomic layer etching (ALET) of Si. The total reaction yield (Si atoms removed per ion) was 0.172; 84% of sili
Autor:
David M. Hoffman, Jiarui Liu, Sri Prakash Rangarajan, Wei-Kan Chu, Demetre J. Economou, Zongshuang Zheng, Satish D. Athavale
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 13:820-825
Nearly stoichiometric silicon, germanium, and tin nitride thin films were deposited from the corresponding homoleptic dimethylamido complexes M (NMe2)4 (M=Si, Ge, Sn; Me=CH3), and an ammonia plasma at low substrate temperatures (
Autor:
Shashank C. Deshmukh, Demetre J. Economou, Sri Prakash Rangarajan, David M. Hoffman, Wei-Kan Chu, Jiarui Liu, Zongshuang Zheng, Satish D. Athavale
Publikováno v:
Journal of Materials Research. 9:3019-3021
Silicon nitride films are grown by plasma enhanced chemical vapor deposition from tetrakis(dimethylamido)silicon, Si(NMe2)4, and ammonia precursors at substrate temperatures of 200-400 °C. Backscattering spectrometry shows that the films are close t
Autor:
Keith T. Kwietniak, Y. Limb, Katherine L. Saenger, M.L. Wise, Deborah A. Neumayer, Gregory Costrini, P. C. Andricacos, J. D. Baniecki, J. Lian, Cyril Cabral, Robert B. Laibowitz, Satish D. Athavale
Publikováno v:
MRS Proceedings. 655
Materials requirements for electrodes and barriers in high density dynamic random access memory (DRAM) and ferroelectric random access memory (FERAM) are reviewed, and some approaches to barrier materials and device geometries are described. Electrod
Autor:
Sri Prakash Rangarajan, Wei-Kan Chu, Demetre J. Economou, Zongshuang Zheng, Satish D. Athavale, David M. Hoffman, Jiarui Liu
Publikováno v:
MRS Proceedings. 335
Amorphous germanium nitride thin films are prepared by plasma enhanced chemical vapor deposition from tetrakis(dimethylamido)germanium, Ge(NMe2)4, and an ammonia plasma at substrate temperatures as low as 190°C with growth rates >250 Å/min. N/Ge ra
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 18:765
Argon/oxygen based chemically assisted ion-beam etching has been investigated for the patterning of stacked capacitor platinum electrodes at ground rules of 200 nm and below. Titanium nitride and bilayers of titanium on top of titanium nitride were u
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 14:3702
An experimental system and methodology were developed to realize dry etching of single crystal silicon with monolayer accuracy. Atomic layer etching of silicon is a cyclic process composed of four consecutive steps: reactant adsorption, excess reacta