Zobrazeno 1 - 10
of 26
pro vyhledávání: '"Satish Bonam"'
Autor:
Venkata Ramesh Naganaboina, Satish Bonam, Mariappan Anandkumar, Atul Suresh Deshpande, Shiv Govind Singh
Publikováno v:
IEEE Electron Device Letters. 43:2153-2156
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8279446ff1fdb792880195f39c8a5558
https://doi.org/10.1109/led.2022.3215616
https://doi.org/10.1109/led.2022.3215616
Autor:
Satish Bonam, Jose Joseph, C. Hemanth Kumar, Asisa Kumar Panigrahi, Siva Rama Krishna Vanjari, Shiv Govind Singh
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 35:626-632
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::42c3013ef5541b9da200d35cc9964252
https://doi.org/10.1109/tsm.2022.3201300
https://doi.org/10.1109/tsm.2022.3201300
Publikováno v:
2022 IEEE 24th Electronics Packaging Technology Conference (EPTC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c05b1b6c693fd9dc3de3418f431c4e2
https://doi.org/10.1109/eptc56328.2022.10013232
https://doi.org/10.1109/eptc56328.2022.10013232
Autor:
Venkata Ramesh Naganaboina, Satish Bonam, Mariappan Anandkumar, Atul Suresh Deshpande, Shiv Govind Singh
Publikováno v:
Materials Chemistry and Physics. 305:127975
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f77bbf0258cec7787c231d962e82cf9
https://doi.org/10.1016/j.matchemphys.2023.127975
https://doi.org/10.1016/j.matchemphys.2023.127975
Publikováno v:
2022 IEEE International Symposium on Circuits and Systems (ISCAS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b05bbebfaec437aaeaddd93c76133e8
https://doi.org/10.1109/iscas48785.2022.9937999
https://doi.org/10.1109/iscas48785.2022.9937999
Autor:
Siva Rama Krishna Vanjari, C. Hemanth Kumar, Asisa Kumar Panigrahi, Shiv Govind Singh, Satish Bonam
Publikováno v:
IEEE Transactions on Components, Packaging and Manufacturing Technology. 9:1227-1234
Optimally engineered ultrathin gold (Au) layer as an effective surface passivation for low-temperature, low-pressure fine-pitch Cu–Cu bonding is demonstrated in this paper. The Au passivation layer not only performs the role of protecting the under
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b56c8e4c98cf4df4bfa8dcc28adfffeb
https://doi.org/10.1109/tcpmt.2019.2912891
https://doi.org/10.1109/tcpmt.2019.2912891
Autor:
Shiv Govind Singh, Hemanth Kumar Cheemalamarri, Satish Bonam, Siva Rama Krishna Vanjari, Dhiman Banik
Publikováno v:
2019 IEEE 21st Electronics Packaging Technology Conference (EPTC).
Thermal management is the critical issue in all present conventional 2D electronic packages, and is more crucial in the case staked dies of advanced 3D IC technology, because of increased power density and complex chip designs. The traditional method
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9af45da3b1e76ebc52460995f3aaafc1
https://doi.org/10.1109/eptc47984.2019.9026576
https://doi.org/10.1109/eptc47984.2019.9026576
Publikováno v:
2019 IEEE 21st Electronics Packaging Technology Conference (EPTC).
Micro-electro-mechanical systems (MEMS) device packaging has proven to be more costly and complex, and it has been a substantial barrier to the commercialization of MEMS. Because of the reason there is a huge requirement of vacuum seal packages for M
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::402ff22d26e124d2b2b8f2b28df57756
https://doi.org/10.1109/eptc47984.2019.9026587
https://doi.org/10.1109/eptc47984.2019.9026587
Autor:
Shiv Govind Singh, Asisa Kumar Panigrahy, Siva Rama Krishna Vanjari, Tamal Ghosh, Satish Bonam
Publikováno v:
2019 IEEE 69th Electronic Components and Technology Conference (ECTC).
One of the primary and critical requirements for high quality wafer level thermocompression Copper-Copper (Cu-Cu) bonding is the fast diffusion of Cu atoms across the boundary between two bonding layers. In this paper, we demonstrate low temperature,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4067159a3c9dc671e987a93e7e57bfe5
https://doi.org/10.1109/ectc.2019.00-24
https://doi.org/10.1109/ectc.2019.00-24
Autor:
Siva Rama Krishna Vanjari, Asisa Kumar Panigrahi, Satish Bonam, Shiv Govind Singh, Tamal Ghosh
Publikováno v:
Materials Letters. 169:269-272
Deposition of Ultra-thin Titanium (Ti) layer (3 nm) on Copper (Cu) surface inhibits surface oxidation upon exposure to ambient air as well as reduces surface roughness from about 2.1 nm (Cu only) to about 0.4 nm resulting in Cu-Cu bonding at a temper
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::21260785403ceb3aff8d5e5b5f4d9b87
https://doi.org/10.1016/j.matlet.2016.01.126
https://doi.org/10.1016/j.matlet.2016.01.126