Zobrazeno 1 - 10
of 68
pro vyhledávání: '"Satilmis Budak"'
Publikováno v:
Chemical Physics Impact, Vol 9, Iss , Pp 100731- (2024)
This study investigates the effects of silicon ion bombardment on the phononic properties of Si/Si+Ge and SiO2/SiO2+Ge superlattices to enhance neutron superreflector technology. Through precise ion implantation and Fourier Transform Infrared Spectro
Externí odkaz:
https://doaj.org/article/7feb42b8a5424474a845a5da2255e643
Publikováno v:
American Journal of Engineering and Applied Sciences. 14:25-50
Publikováno v:
American Journal of Engineering and Applied Sciences. 13:668-682
Publikováno v:
Progress In Electromagnetics Research Letters. 90:69-75
Autor:
Mebougna L. Drabo, Satilmis Budak
Publikováno v:
American Journal of Applied Sciences. 16:225-237
Thermoelectric devices were prepared using different multilayered thin film structures in the order of Ge/Si+Ge, Si+Ge, Si, Sb+Ge, Ge and SiO2/SiO2+Ge by DC/RF Magnetron Sputtering. The thickness of the deposited thin films were measured using Filmet
Publikováno v:
Journal of Electronic Materials. 45:5588-5599
In this study the ac (alternating current) small-signal electrical data in the frequency range 5 Hz ≤ f ≤ 13 MHz are obtained for the multi-layered thermoelectric (TE) devices to extract underlying operative mechanisms via an equivalent circuit m
Autor:
Zhigang Xiao, Mebougna L. Drabo, Satilmis Budak, Ashley Tramble, Chauncy Casselberry, Jordan Cole, Barry Johnson
Publikováno v:
American Journal of Engineering and Applied Sciences. 9:356-363
The efficiency of the thermoelectric materials and devices is shown by the dimensionless Figure of merit, ZT. ZT is calculated by multiplying the Seebeck coefficient with square of the electrical conductivity and absolute temperature and dividing it
Publikováno v:
Journal of Electronic Materials. 44:1884-1889
The ternary chalcogenides AgBiTe2 and AgSbTe2 belong to the family of semiconductors with disordered NaCl cubic structure in which Ag and Sb occupy metal sublattices. Both compounds are very interesting due to their thermoelectric properties. We have
Publikováno v:
Physics Procedia. 66:321-328
Thermoelectric generator devices have been prepared from 200 alternating layers of SiO 2 /SiO 2 +Ge superlattice films using DC/RF magnetron sputtering. The 5 MeV Si ionsbombardmenthasbeen performed using the AAMU Pelletron ion beam accelerator to fo
Publikováno v:
Physics Procedia. 66:329-335
Semiconducting β-Zn 4 Sb 3 and ZrNiSn-based half-Heusler compound thin films with applications as thermoelectric (TE) materials were prepared using ion beam assisted deposition (IBAD). High-purity solid zinc (Zn) and antimony (Sb) were evaporated by