Zobrazeno 1 - 10
of 29
pro vyhledávání: '"Saskia Schimmel"'
Autor:
Thomas Wostatek, V. Y. M. Rajesh Chirala, Nathan Stoddard, Ege N. Civas, Siddha Pimputkar, Saskia Schimmel
Publikováno v:
Materials, Vol 17, Iss 13, p 3104 (2024)
The state-of-the-art ammonothermal method for the growth of nitrides is reviewed here, with an emphasis on binary and ternary nitrides beyond GaN. A wide range of relevant aspects are covered, from fundamental autoclave technology, to reactivity and
Externí odkaz:
https://doaj.org/article/cd6fee712b7d4ffaaeb8c932a3f9f16b
Autor:
Saskia Schimmel, Daisuke Tomida, Tohru Ishiguro, Yoshio Honda, Shigefusa F. Chichibu, Hiroshi Amano
Publikováno v:
Materials, Vol 16, Iss 5, p 2016 (2023)
With the ammonothermal method, one of the most promising technologies for scalable, cost-effective production of bulk single crystals of the wide bandgap semiconductor GaN is investigated. Specifically, etch-back and growth conditions, as well as the
Externí odkaz:
https://doaj.org/article/7849afc2f112463681c8b4cea913737e
Publikováno v:
Crystals, Vol 12, Iss 9, p 1232 (2022)
The Special Issue on “Artificial Intelligence for Crystal Growth and Characterization” comprises six original articles in this emerging field of research [...]
Externí odkaz:
https://doaj.org/article/967cc1a6a7f94be3b8e945cbfb939dfd
Autor:
Saskia Schimmel, Michael Salamon, Daisuke Tomida, Steffen Neumeier, Tohru Ishiguro, Yoshio Honda, Shigefusa F. Chichibu, Hiroshi Amano
Publikováno v:
Materials, Vol 15, Iss 17, p 6165 (2022)
For the fundamental understanding and the technological development of the ammonothermal method for the synthesis and crystal growth of nitrides, an in situ monitoring technique for tracking mass transport of the nitride throughout the entire autocla
Externí odkaz:
https://doaj.org/article/ebad211dbf0546baad7b967d68d8abb8
Numerical Simulation of Ammonothermal Crystal Growth of GaN—Current State, Challenges, and Prospects
Autor:
Saskia Schimmel, Daisuke Tomida, Tohru Ishiguro, Yoshio Honda, Shigefusa Chichibu, Hiroshi Amano
Publikováno v:
Crystals, Vol 11, Iss 4, p 356 (2021)
Numerical simulations are a valuable tool for the design and optimization of crystal growth processes because experimental investigations are expensive and access to internal parameters is limited. These technical limitations are particularly large f
Externí odkaz:
https://doaj.org/article/d0d0e2cd6b3343a59697c4f36d0bd4ea
Autor:
Saskia Schimmel, Daisuke Tomida, Makoto Saito, Quanxi Bao, Toru Ishiguro, Yoshio Honda, Shigefusa Chichibu, Hiroshi Amano
Publikováno v:
Crystals, Vol 11, Iss 3, p 254 (2021)
Thermal boundary conditions for numerical simulations of ammonothermal GaN crystal growth are investigated. A global heat transfer model that includes the furnace and its surroundings is presented, in which fluid flow and thermal field are treated as
Externí odkaz:
https://doaj.org/article/decdc90eb27249f7b26e33bca4de74a7
Autor:
Saskia Schimmel, Ines Kobelt, Lukas Heinlein, Anna-Carina L. Kimmel, Thomas G. Steigerwald, Eberhard Schlücker, Peter Wellmann
Publikováno v:
Crystals, Vol 10, Iss 9, p 723 (2020)
A variety of functional nitride materials, including the important wide bandgap semiconductor GaN, can be crystallized in exceptionally good structural quality by the ammonothermal method. However, the further development of this method is hindered b
Externí odkaz:
https://doaj.org/article/72701d5ef8fe4217ba1c88deecc8d2ca
Autor:
Daisuke Tomida, Makoto Saito, Yoshio Honda, Toru Ishiguro, Saskia Schimmel, Shigefusa F. Chichibu, Quanxi Bao, Hiroshi Amano
Publikováno v:
Crystals, Vol 11, Iss 254, p 254 (2021)
Crystals
Volume 11
Issue 3
Crystals
Volume 11
Issue 3
Thermal boundary conditions for numerical simulations of ammonothermal GaN crystal growth are investigated. A global heat transfer model that includes the furnace and its surroundings is presented, in which fluid flow and thermal field are treated as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e5f8855c223f676e39b0f0ba1b211d51
https://www.mdpi.com/2073-4352/11/3/254
https://www.mdpi.com/2073-4352/11/3/254
Publikováno v:
Ammonothermal Synthesis and Crystal Growth of Nitrides ISBN: 9783030563042
As the ammonothermal method often requires technically challenging conditions such as high temperature, high pressure and reaction media that are rather corrosive towards most metals (see Chap. 11), the further development of ammonothermal process eq
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::24e4ba6352f68a5d63afca17339dd066
https://doi.org/10.1007/978-3-030-56305-9_17
https://doi.org/10.1007/978-3-030-56305-9_17
Autor:
Peter J. Wellmann, Saskia Schimmel
Publikováno v:
Ammonothermal Synthesis and Crystal Growth of Nitrides ISBN: 9783030563042
X-ray based in situ monitoring techniques for ammonothermal processes are reviewed. Technological aspects are discussed, including general aspects of in situ X-ray visualization technology as well as the corrosion resistance of prospective materials
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9340f926db4eef2d005d58c9f1ea570b
https://doi.org/10.1007/978-3-030-56305-9_10
https://doi.org/10.1007/978-3-030-56305-9_10