Zobrazeno 1 - 10
of 235
pro vyhledávání: '"Sasioglu, E."'
Gapped metals, a recently discovered new class of materials, possess a band gap slightly above or below the Fermi level. These materials are intrinsic p- or n-type semiconductors eliminating the need for extrinsic doping. Inspired by this concept, we
Externí odkaz:
http://arxiv.org/abs/2403.00936
Publikováno v:
Phys. Rev. Applied 22, 014004, 2024
Cold metals have recently gained attention as a promising platform for innovative devices, such as tunnel diodes with negative differential resistance (NDR) and field-effect transistors with subthreshold swings below the thermionic limit. Recently di
Externí odkaz:
http://arxiv.org/abs/2312.08473
Publikováno v:
Physical Review Materials 6. 114101 (2022)
Mn-based full Heusler compounds possess well-defined local atomic Mn moments, and thus the correlation effects between localized d electrons are expected to play an important role in determining the electronic and magnetic properties of these materia
Externí odkaz:
http://arxiv.org/abs/2210.13061
Magnetic tunnel junctions (MTJs) have attracted strong research interest within the last decades due to their potential use as nonvolatile memory such as MRAM as well as for magnetic logic applications. Half-metallic magnets (HMMs) have been suggeste
Externí odkaz:
http://arxiv.org/abs/2202.06752
Autor:
Raju, M., Petrović, A. P., Yagil, A., Denisov, K. S., Duong, N. K., Göbel, B., Şaşıoğlu, E., Auslaender, O. M., Mertig, I., Rozhansky, I. V., Panagopoulos, C.
Publikováno v:
Nat Commun 12, 2758 (2021)
The topological Hall effect is used extensively to study chiral spin textures in various materials. However, the factors controlling its magnitude in technologically-relevant thin films remain uncertain. Using variable temperature magnetotransport an
Externí odkaz:
http://arxiv.org/abs/2105.08245
Publikováno v:
Phys. Rev. Materials, 5 (2021) 034001
We calculate the strength of the effective onsite Coulomb interaction (Hubbard $U$) in two-dimensional (2D) transition-metal (TM) dihalides MX$_2$ and trihalides MX$_3$ (M=Ti, V, Cr, Mn, Fe, Co, Ni; X=Cl, Br, I) from first principles using the constr
Externí odkaz:
http://arxiv.org/abs/2105.05293
Publikováno v:
Appl. Phys. Lett. 118, 052405 (2021)
The Ohmic spin diode (OSD) is a recent concept in spintronics, which is based on half-metallic magnets (HMMs) and spin-gapless semiconductors (SGSs). Quaternary Heusler compounds offer a unique platform to realize the OSD for room temperature applica
Externí odkaz:
http://arxiv.org/abs/2102.01919
Publikováno v:
Phys. Rev. Applied 14, 014082 (2020)
The ideal diode is a theoretical concept that completely conducts the electric current under forward bias without any loss and that behaves like a perfect insulator under reverse bias. However, real diodes have a junction barrier that electrons have
Externí odkaz:
http://arxiv.org/abs/2009.10463
Autor:
Aull, T., Şaşıoğlu, E., Maznichenko, I. V., Ostanin, S., Ernst, A., Mertig, I., Galanakis, I.
Publikováno v:
Phys. Rev. Materials 3, 124415 (2019)
Reconfigurable magnetic tunnel diodes and transistors are a new concept in spintronics. The realization of such a device requires the use of materials with unique spin-dependent electronic properties such as half-metallic magnets (HMMs) and spin-gapl
Externí odkaz:
http://arxiv.org/abs/2001.07029
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