Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Sascha Bott"'
Autor:
Ushasree Katakamsetty, Stefan Voykov, Sascha Bott, Sam Nakagawa, Tamba Gbondo-Tugbawa, Aaron Gower-Hall, Brian Lee, Jansen Chee, Henry Geng, Weiyang Zhu, Bifeng Li, Kimiko Ichikawa
Publikováno v:
DTCO and Computational Patterning.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa0403ec439f4f9c2637c0ee6e7a789e
https://doi.org/10.1117/12.2616078
https://doi.org/10.1117/12.2616078
Publikováno v:
Microelectronic Engineering. 91:159-166
Chemical mechanical planarization (CMP) models which are able to make predictions on the chip and feature scale are highly desirable in semiconductor manufacturing. Most of the models proposed in the past years have largely focused on the pattern den
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::20a61d67e548ebfb7f9ff40643bc4c4e
https://doi.org/10.1016/j.mee.2011.09.007
https://doi.org/10.1016/j.mee.2011.09.007
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 24:338-347
Chemical mechanical planarization (CMP) models which are able to make predictions for a full chip are highly desirable in semiconductor manufacturing. Previous models proposed to this end have largely focused on effects of pattern density. We here ex
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb3708dd6b5875f32fd099063ff02770
https://doi.org/10.1109/tsm.2011.2107756
https://doi.org/10.1109/tsm.2011.2107756
Autor:
Romy Liske, Robert Krause, Benjamin Uhlig, Lukas Gerlich, Sascha Bott, Marcus Wislicenus, Axel Preusse
The advanced scaling in microelectronic devices requires filling of smaller and smaller copper lines without the introduction of voids and defects. Electrochemical deposition is the process of choice as it ensures a bottom-up, void-free copper growth
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9a15b94340a82289cdc6a4cd5e74c575
Chemical-mechanical planarization (CMP) is one of the most demanding process steps in interconnect integration. Therefore, with respect to the pad roughness, we systematically characterize and model the planarization of special CMP test chips, which
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::45288c606ed72caee9f033e806e899e3
https://publica.fraunhofer.de/handle/publica/232255
https://publica.fraunhofer.de/handle/publica/232255
Chemical-mechanical planarization (CMP) is one of the most demanding process steps in interconnect integration, because it is influenced by numerous variables. Among them is the roughness of the polishing pad. Therefore we systematically characterize
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::122d4c1780d56e33a1a04108cbc29579
https://publica.fraunhofer.de/handle/publica/233346
https://publica.fraunhofer.de/handle/publica/233346
Publikováno v:
2011 IEEE International Interconnect Technology Conference.
Chemical-mechanical planarization (CMP) is one of the most demanding process steps in interconnect integration. Therefore we systematically investigate the planarization of adjacent line-space structures, which emulate IC layouts, as a function of th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d149fa12bb6f7fdda7b3798bc2374a2
https://doi.org/10.1109/iitc.2011.5940349
https://doi.org/10.1109/iitc.2011.5940349
In this paper, we consider the chemical-mechanical planarization (CMP) of adjacent line-space structures with different pattern density. Such structures are used on test-chips for process characterization and provide similar features like typical DRA
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8498440a093704494440d1f2f4246a5a
https://publica.fraunhofer.de/handle/publica/225378
https://publica.fraunhofer.de/handle/publica/225378