Zobrazeno 1 - 10
of 2 978
pro vyhledávání: '"Sasaki, Satoshi"'
Autor:
McCauley, Mairi, Ansari, Lida, Gity, Farzan, Rogers, Matthew, Burton, Joel, Sasaki, Satoshi, Ramasse, Quentin, Knox, Craig, Hurley, Paul K, MacLaren, Donald, Moorsom, Timothy
Topological Insulators (TIs) present an interesting materials platform for nanoscale, high frequency devices because they support high mobility, low scattering electronic transport within confined surface states. However, a robust methodology to cont
Externí odkaz:
http://arxiv.org/abs/2410.23983
Autor:
Akiho, Takafumi, Irie, Hiroshi, Nakazawa, Yusuke, Sasaki, Satoshi, Kumada, Norio, Muraki, Koji
We have fabricated a superconductor/semiconductor (S/Sm) junction composed of Al and InAs using cleaved edge overgrowth. By exploiting the unique geometry with a thin Al/Pt/Al trilayer formed on the side surface of an in-situ cleaved heterostructure
Externí odkaz:
http://arxiv.org/abs/2407.21557
Autor:
Shimizu, Takase, Iyoda, Eiki, Sasaki, Satoshi, Endo, Akira, Katsumoto, Shingo, Kumada, Norio, Hashisaka, Masayuki
Inter-channel Coulomb interaction mixes charge excitations in copropagating quantum Hall edge channels, generating coupled excitation eigenmodes propagating at different speeds. This mode transformation causes an electron state to split into fragment
Externí odkaz:
http://arxiv.org/abs/2407.11490
Autor:
Yoshioka, Katsumasa, Bernard, Guillaume, Wakamura, Taro, Hashisaka, Masayuki, Sasaki, Ken-ichi, Sasaki, Satoshi, Watanabe, Kenji, Taniguchi, Takashi, Kumada, Norio
Publikováno v:
Nature Electronics 7, 537 (2024)
Steering transport of ultrashort polariton wavepackets is essential for achieving on-chip integrated nanocircuits with tightly confined electromagnetic fields towards ultrafast information processing. However, conventional optical techniques have str
Externí odkaz:
http://arxiv.org/abs/2311.02821
Autor:
Hashisaka, Masayuki, Ito, Takuya, Akiho, Takafumi, Sasaki, Satoshi, Kumada, Norio, Shibata, Naokazu, Muraki, Koji
Couplings between topological edge channels open electronic phases possessing nontrivial eigenmodes far beyond the noninteracting-edge picture. However, inelastic scatterings mask the eigenmodes' inherent features, often preventing us from identifyin
Externí odkaz:
http://arxiv.org/abs/2212.13399
Autor:
Knox Craig S., Vaughan Matthew T., Fox Nathan R., Yagmur Ahmet, Sasaki Satoshi, Cunningham John E., Linfield Edmund H., Davies Alexander G., Freeman Joshua R.
Publikováno v:
Nanophotonics, Vol 13, Iss 10, Pp 1843-1850 (2024)
We have performed an investigation into the optical conductivity and magnetotransport properties of top-gated devices patterned on the topological insulator Bi2Se3 in order to determine the relative effects of the different carrier species that exist
Externí odkaz:
https://doaj.org/article/71d66cb310484f2d8665a7b869162a27
Publikováno v:
In Life Sciences in Space Research August 2024 42:84-90
Autor:
Andaregie, Adino, Sasaki, Satoshi, Shimura, Hirohisa, Chikasada, Mitsuko, Sato, Shinjiro, Addisu, Solomon, Astatkie, Tessema, Takagi, Isao
Publikováno v:
In Applied Food Research June 2024 4(1)
Autor:
Takase, Keiko, Utsumi, Yasuhiro, Ashikawa, Yamato, Zhang, Guoqiang, Tateno, Kouta, Okazaki, Yuma, Sasaki, Satoshi
We report shot noise measurements for a quantum dot formed in an InAs nanowire suspended between superconducting electrodes. We find a clear alternation for the shot noise value in the Coulomb blockade regime between even and odd electron occupation
Externí odkaz:
http://arxiv.org/abs/2107.13928
Publikováno v:
Appl. Phys. Lett. 119, 013102 (2021). (Editor's Pick)
We develop an InAs nanowire gate-all-around field-effect transistor using a transparent conductive zinc oxide (ZnO) gate electrode, which is in-situ atomic layer deposited after growth of gate insulator of Al2O3. We perform magneto-transport measurem
Externí odkaz:
http://arxiv.org/abs/2106.10036