Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Sarra Mhedhbi"'
Autor:
Benjamin Damilano, Marie Lesecq, Sébastien Chenot, Sarra Mhedhbi, Julien Brault, Yvon Cordier, Virginie Hoel, Nicolas Defrance, G. Tabares, A. Ebongue, P. Altuntas
Publikováno v:
IEEE Photonics Technology Letters
IEEE Photonics Technology Letters, Institute of Electrical and Electronics Engineers, 2016, 28 (15), pp.1661-1664. ⟨10.1109/LPT.2016.2563258⟩
IEEE Photonics Technology Letters, 2016, 28 (15), pp.1661-1664. ⟨10.1109/LPT.2016.2563258⟩
IEEE Photonics Technology Letters, Institute of Electrical and Electronics Engineers, 2016, 28 (15), pp.1661-1664. ⟨10.1109/LPT.2016.2563258⟩
IEEE Photonics Technology Letters, 2016, 28 (15), pp.1661-1664. ⟨10.1109/LPT.2016.2563258⟩
The role that the mother substrate plays to influence the performance of InGaN/GaN-based light-emitting diodes (LEDs) onto the adhesive flexible tapes is addressed in this letter. For this purpose, the electroluminescent (EL) spectra and current dens
Autor:
Nicolas Defrance, Benjamin Damilano, P. Altuntas, Yvon Cordier, G. Tabares-Jimenez, A. Ebongue, Virginie Hoel, Etienne Okada, Marie Lesecq, Sarra Mhedhbi
Publikováno v:
IEEE Electron Device Letters
IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2016, 37 (5), pp.553-555. ⟨10.1109/LED.2016.2542921⟩
IEEE Electron Device Letters, 2016, 37 (5), pp.553-555. ⟨10.1109/LED.2016.2542921⟩
IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2016, 37 (5), pp.553-555. ⟨10.1109/LED.2016.2542921⟩
IEEE Electron Device Letters, 2016, 37 (5), pp.553-555. ⟨10.1109/LED.2016.2542921⟩
This letter reports on the first demonstration of microwave power performance at 10 GHz on flexible AlGaN/GaN high-electron-mobility transistor (HEMT). A maximum dc current density of 620 mA/mm at $\text{V}_{\mathrm {GS}} = 0$ V and a peak extrinsic
Autor:
Gema Tabares Jimenéz, Virginie Hoel, Yvon Cordier, Benjamin Damilano, Sarra Mhedhbi, P. Altuntas, A. Ebongue, Nicolas Defrance, Marie Lesecq
Publikováno v:
physica status solidi (a). 214:1600484
This paper reports on the fabrication and characterization of AlGaN/GaN HEMTs transfered onto two different adhesive flexible tapes. Technological improvements were made during the study concerning thermal conductivity of the tapes as well as the tra