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pro vyhledávání: '"Saroja P. Edirisinghe"'
Publikováno v:
Journal of Applied Physics. 82:4870-4876
Transmission electron microscopy (TEM) has been used to investigate the mechanisms of misfit strain relaxation in InxGa1−xAs epilayers grown on GaAs(111¯)B substrates misoriented 2° towards [211¯]. It was found that the relaxation was brought ab
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::be27c78049c0cfdc37d18f0012107b12
https://doi.org/10.1063/1.366349
https://doi.org/10.1063/1.366349
