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pro vyhledávání: '"Saroj Pratap Sahu"'
Autor:
Tumesh Kumar Sahu, Saroj Pratap Sahu, K. P. S. S. Hembram, Jae-Kap Lee, Vasudevanpillai Biju, Prashant Kumar
Publikováno v:
NPG Asia Materials, Vol 15, Iss 1, Pp 1-11 (2023)
Abstract Two-dimensional gallium nitride (2D GaN) with a large direct bandgap of ~5.3 eV, a high melting temperature of ~2500 °C, and a large Young’s modulus ~20 GPa developed for miniaturized interactive electronic gadgets can function at high th
Externí odkaz:
https://doaj.org/article/ec3b7e717987494bbabfa7fa0f6a0920
