Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Sarohan Park"'
Autor:
Chan-Ha Park, Jeroen Van de Kerkhove, Nouredine Rassoul, Anne-Laure Charley, Pieter Vanelderen, Frederic Lazzarino, Lieve Van Look, Amir-Hossein Tamaddon, Romuald Blanc, Frieda Van Roey, Geert Vandenberghe, Danilo De Simone, Kurt G. Ronse, Chang-Moon Lim, Junghyung Lee, Sarohan Park, Kilyoung Lee, Nadia Vandenbroeck, Roberto Fallica, Gian Lorusso
Publikováno v:
Extreme Ultraviolet (EUV) Lithography X.
Extreme ultraviolet (EUV) materials are deemed as critical to enable and extend the EUV lithography technology. Currently both chemically amplified resist (CAR) and metal-oxide resist (MOR) platforms are candidates to print tight features on wafer, h
Autor:
Jinwoo Choi, Sunyoung Koo, Inhwan Lee, Mijung Lim, Chang-Moon Lim, Sarohan Park, Yoonsuk Hyun
Publikováno v:
SPIE Proceedings.
As we presented in the last conference, it is much difficult to get down the k1 limit of EUV lithography compared to that of optical lithography especially recent immersion lithography. Even though current 0.33NA NXE3300 tool has enhanced aberration
Autor:
De Simone, Danilo, Blanc, Romuald, Van de Kerkhove, Jeroen, Tamaddon, Amir-Hossein, Fallica, Roberto, Van Look, Lieve, Rassoul, Nouredine, Lazzarino, Frederic, Vandenbroeck, Nadia, Vanelderen, Pieter, Lorusso, Gian, Van Roey, Frieda, Charley, Anne-Laure, Vandenberghe, Geert, Ronse, Kurt, Kilyoung Lee, Junghyung Lee, Sarohan Park, Chang-Moon Lim, Chan-Ha Park
Publikováno v:
Proceedings of SPIE; 1/20/2019, Vol. 10957, p109570T-1-109570T-10, 10p
Publikováno v:
Catalysis Letters. Apr2003, Vol. 87 Issue 3/4, p219-223. 5p.
Publikováno v:
Extreme Ultraviolet (EUV) Lithography VII.
Sub 0.3k1 regime has been widely adopted for high volume manufacturing (HVM) of optical lithography due to various resolution enhancement technologies (RETs). It is not certain when such low k1 is feasible in EUV, though most technologies are availab
Publikováno v:
Extreme Ultraviolet (EUV) Lithography VII.
The improvement of overlay control in extreme ultra-violet (EUV) lithography is one of critical issues for successful mass production by using it. Especially it is important to improve the mix and match overlay or matched machine overlay (MMO) betwee
Autor:
Danilo De Simone, Sarohan Park, Chang-Moon Lim, Seo-Min Kim, Geert Vandenberghe, Zheng Tao, Yoonsuk Hyun
Publikováno v:
SPIE Proceedings.
In this paper, we will present the experimental comparison results on contact holes (CHs) and pillars patterning in EUV lithography with several candidate processes. Firstly, we have compared the normalized image log-slope (NILS), local critical dime
Publikováno v:
Solid State Ionics. 175:625-629
NO x decomposition over the electrochemical cell that involves oxygen-conducting membrane and lanthanum stannate pyrochlore catalysts has been investigated. Removal of the oxygen adsorbed on the active sites, triple-phase boundaries, was prerequisite
Publikováno v:
Catalysis Letters. 87:219-223
Well-defined Ln2Sn2O7 powders (Ln = La, Sm and Gd) with a phase-pure pyrochlore structure were synthesized by hydrothermal reaction. The catalytic activities of Ln2Sn2O7 powders for methane combustion were measured. Methane oxidation started at 500
Autor:
Sarohan Park, Andreas Fuchs, Jongsu Lee, Byoung Hoon Lee, Jeongsu Park, Donggyu Yim, Chang-Moon Lim, Chan-Ho Ryu, Kaustuve Bhattacharyya, Maurits van de Schaar, Sungki Park, Stephen P. Morgan
Publikováno v:
SPIE Proceedings.
Overlay performance will be increasingly important for Spacer Patterning Technology (SPT) and Double Patterning Technology (DPT) as various Resolution Enhancement Techniques are employed to extend the resolution limits of lithography. Continuous shri