Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Sarita Misra"'
Publikováno v:
SN Applied Sciences, Vol 5, Iss 12, Pp 1-10 (2023)
Abstract Linearity analysis of nanoscale devices is a vital issue as nonlinearity behavior is exhibited by them when employed in circuits for microwave and RF applications. In this work, a junctionless surrounded gate-graded channel MOSFET (JLSGGC MO
Externí odkaz:
https://doaj.org/article/c901bdb49c4d4b85ae82a237efc79151
Linarity analysis of nanoscaled devices is a vital issue as nonlinearity behaviour is exhibited by them when employed in circuits for microwave and RF applications. In this work a junctionless surrounded gate graded channel MOSFET (JLSGGC MOSFET) is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a45457f29a50083fecf2d7ec7c119d1
https://doi.org/10.21203/rs.3.rs-2757963/v1
https://doi.org/10.21203/rs.3.rs-2757963/v1
Autor:
Biswajit Baral, Angsuman Sarkar, Sanjit Kumar Swain, Sarita Misra, Sudhansu Kumar Pati, Sudhansu Mohan Biswal
Publikováno v:
Journal of Computational Electronics. 20:480-491
As short-channel effects (SCEs) are a major issue in the nanoscale regime, investigation of the subthreshold behaviour of nanometer-scale devices is critical. Here, we have developed an analytical model for a cylindrical gate junctionless accumulatio
This paper explores the potential advantage of surrounded gate junctionless graded channel (SJLGC) MOSFET in the view of its Analog, RF performances using ATLAS TCAD device simulator. The impact of graded channel in the lateral direction on the poten
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::628496792ab019c9c02e39be4a3e492a
https://doi.org/10.21203/rs.3.rs-621755/v1
https://doi.org/10.21203/rs.3.rs-621755/v1
Publikováno v:
ECS Journal of Solid State Science and Technology. 10:073001
Publikováno v:
2018 IEEE Electron Devices Kolkata Conference (EDKCON).
In this work, we have accomplished an efficient quantitative inquiry on the analog/RF performance of gate-all-around (GAA) junction less Metal oxide field effect transistor(JL MOSFET).Here, we have considered the down scaled gate length and underlap