Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Saraswati Irma"'
Autor:
Saraswati Irma, Dwi Puspitasari Vera, Anggoro S Pramudyo, Alimuddin, Firmansyah Teguh, Oktorida Khastini Rida, Mardono Untung
Publikováno v:
MATEC Web of Conferences, Vol 218, p 03017 (2018)
Indonesian agricultural system has improved significantly along with technological developments. However, as a result of technological developments, agricultural land becomes narrow. To overcome the increasingly narrow farming land, start developing
Externí odkaz:
https://doaj.org/article/8c5dcdcbaf974447a93e015d4cb8eaeb
Akademický článek
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Autor:
Saraswati, Irma
Ce travail de thèse est lié concerne l’étude de composants optoélectroniques à base de nouveaux matériaux semi-conducteurs, les nitrures de gallium (GaN) déposés sur silicium. Les défis qui nous attendent concernent essentiellement la qual
Externí odkaz:
http://www.theses.fr/2015LIL10145/document
Autor:
Cuniot-Ponsard, Mireille, Saraswati, Irma, Ko, S.-M., Halbwax, Mathieu, Cho, Y.-H., Poespawati, N.-R., Dogheche, El Hadj
Publikováno v:
European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium K-Challenges for group III nitride semiconductors for solid state lighting and beyond
European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium K-Challenges for group III nitride semiconductors for solid state lighting and beyond, May 2014, Lille, France
European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium K-Challenges for group III nitride semiconductors for solid state lighting and beyond, May 2014, Lille, France
International audience; In order to take advantage in all-optic optoelectronic devices, we have investigated the optical and piezoelectric properties of GaN films deposited on (111) silicon. Films are epitaxially grown by MOCVD, thanks to a buffer ma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::545afac1a401329ecf59c81c79281a29
https://hal.archives-ouvertes.fr/hal-00961405
https://hal.archives-ouvertes.fr/hal-00961405
Autor:
Cuniot-Ponsard, Mireille, Saraswati, Irma, Ko, Suk-Min, Halbwax, Mathieu, Cho, Yong-Hoon, Dogheche, El Hadj
Publikováno v:
Conference on Lasers and Electro-Optics, CLEO 2014, Laser Science to Photonic Applications
Conference on Lasers and Electro-Optics, CLEO 2014, Laser Science to Photonic Applications, 2014, San Jose, CA, United States
Conference on Lasers and Electro-Optics, CLEO 2014, Laser Science to Photonic Applications, 2014, San Jose, CA, United States
We report the first measurement of the (r13, r33) Pockels electro-optic coefficients in a SBN thin film and in a GaN thin film grown on silicon. The converse-piezoelectric and electro-absorptive coefficients are simultaneously determined.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::ec2bb9e77c20dee3538f2676ead92e69
https://hal.archives-ouvertes.fr/hal-00975792
https://hal.archives-ouvertes.fr/hal-00975792
Publikováno v:
Biosaintifika: Journal of Biology & Biology Education; Aug2018, Vol. 10 Issue 2, p424-432, 9p
Autor:
Saraswati, Irma, Poepawati, NR., Retno, Wigajatri P, Dogheche, Elhadj, Decoster, Didier, Ko, S., Cho, Y.H., Considine, L., Pavlidis, D.
Publikováno v:
2012 Photonics Global Conference (PGC); 1/ 1/2012, p1-5, 5p
Autor:
Saraswati, Irma, Stolz, Arnaud, Ko, S., Dogheche, Elhadj, Poespawati, Nji Raden, Wigajatri, Retno, Decoster, Didier
Publikováno v:
Advanced Materials Research; June 2014, Vol. 980 Issue: 1 p41-45, 5p
Autor:
Witjaksono, Gunawan, Saraswati, Irma
Publikováno v:
International Journal of Communication Networks and Distributed Systems; January 2008, Vol. 1 Issue: 3 p330-349, 20p
Publikováno v:
IOP Conference Series: Materials Science and Engineering; April 2019, Vol. 508 Issue: 1 p012138-012138, 1p