Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Saranya, Krishnamurthy"'
Publikováno v:
Materials Research Express, Vol 7, Iss 3, p 035907 (2020)
This study proposes the High- κ dielectric Trench Shielded power UMOSFET (HK TS-UMOSFET) to be assessed using the two-dimensional numerical simulations. The simulations are employed to evaluate HK TS-UMOSFETs susceptibility to single-event burnout (
Externí odkaz:
https://doaj.org/article/2e5c7a6950b147658736815d026c64e2
Publikováno v:
Recent Advances in Electrical & Electronic Engineering (Formerly Recent Patents on Electrical & Electronic Engineering). 13:758-765
Background: Power converters used in nanosatellite application required to be more tolerant to radiations including proton, electron and heavy-ion radiation. Methods: A Single-Ended Primary Inductance Converter (SEPIC) is selected for the nanosatelli
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f4e2b6ca84ee0e037906fc7dbb6dbc4
https://doi.org/10.2174/2352096512666191004154951
https://doi.org/10.2174/2352096512666191004154951
Publikováno v:
2020 IEEE International Conference on Power and Energy (PECon).
In this work, TCAD simulation has been applied to study the Power U- shape metal-oxide-semiconductor field- effect transistor (P-island Power UMOSFET) with p-type islands to determine its sensitivity to Single Event Burnout (SEB). In the drift area,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9ac315eddf51fe1ea8019537810a012b
https://doi.org/10.1109/pecon48942.2020.9314508
https://doi.org/10.1109/pecon48942.2020.9314508
Publikováno v:
2019 IEEE Regional Symposium on Micro and Nanoelectronics (RSM).
An enhanced structure for Single-Event Burnout (SEB) hardening in trench gate shielded power UMOSFET is presented in this work. The proposed power MOSFET structure includes an n-type region wrapping p+ shielded region underneath the gate trench and a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1a201539595829663ddc0b962aef8913
https://doi.org/10.1109/rsm46715.2019.8943495
https://doi.org/10.1109/rsm46715.2019.8943495
Autor:
Saranya, Krishnamurthy1 ksaranya31@gmail.com, Thirumarimurugan, Marimuthu1
Publikováno v:
Polish Journal of Environmental Studies. 2015, Vol. 24 Issue 3, p1291-1297. 7p.
Publikováno v:
Materials Research Express. 7:035907
This study proposes the High-κ dielectric Trench Shielded power UMOSFET (HK TS-UMOSFET) to be assessed using the two-dimensional numerical simulations. The simulations are employed to evaluate HK TS-UMOSFETs susceptibility to single-event burnout (S
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d6fc3d3913de957a558f9a56e18810d
https://doi.org/10.1088/2053-1591/ab816a
https://doi.org/10.1088/2053-1591/ab816a
Publikováno v:
2017 IEEE 3rd International Symposium in Robotics and Manufacturing Automation (ROMA).
The vigorous growth in portable multimedia devices and communication system has increased the demand for area and power efficient high-speed Digital Signal Processing (DSP) system. Usage of digital Finite Impulse Response (FIR) filter is one of the p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::79690c82496605f59a4e7c53e78d8cc5
https://doi.org/10.1109/roma.2017.8231838
https://doi.org/10.1109/roma.2017.8231838
Publikováno v:
International Journal of Electrical and Computer Engineering (IJECE). 9:1453
Power electronic devices in spacecraft and military applications requires high radiation tolerant. The semiconductor devices face the issue of device degradation due to their sensitivity to radiation. Power MOSFET is one of the primary components of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb5e5e30c32ab198ee7232df29b330a4
https://doi.org/10.11591/ijece.v9i2.pp1453-1460
https://doi.org/10.11591/ijece.v9i2.pp1453-1460
Publikováno v:
MATEC Web of Conferences, Vol 225, p 05013 (2018)
The rapid growth of the advanced technologies in power electronics system gives a challenge to the electronic device to sustain with the modern technologies nowadays. The challenges are also including the place where the system was installed for exam
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0bac55ba41ab6917bbab5129cce20cfc
https://doi.org/10.1051/matecconf/201822505013
https://doi.org/10.1051/matecconf/201822505013