Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Sarah K. Haney"'
Publikováno v:
Materials Science Forum. :707-710
MOSFETs and capacitors have been fabricated to investigate the atomic layer depositon (ALD) of SiO2onto SiC compared to thermal oxidation of SiC. Devices were fabricated on 4H-SiC with the following oxidation treatments: thermal oxidation at 1175°C,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7950af79d89e84b2ad56f200cfb6c1d0
https://doi.org/10.4028/www.scientific.net/msf.740-742.707
https://doi.org/10.4028/www.scientific.net/msf.740-742.707
Publikováno v:
Materials Science Forum. :1073-1076
Significant advancement has been made in the gate oxide reliability of SiC MOS devices to enable the commercial release of Cree’s Z-FET™ product. This paper discusses the key reliability results from Time-Dependent-Dielectric-Breakdown (TDDB) and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::03a100808943964b010f2a21c4fe23ad
https://doi.org/10.4028/www.scientific.net/msf.717-720.1073
https://doi.org/10.4028/www.scientific.net/msf.717-720.1073
Autor:
Robert E. Stahlbush, Hap L. Hughes, P.J. McMarr, Karl D. Hobart, Sarah K. Haney, Fritz J. Kub, Marko J. Tadjer
Publikováno v:
Materials Science Forum. :469-472
Thermally stimulated current (TSC) measurements on epitaxial and implanted 4H-SiC MOS capacitors are presented. The effect of gamma ray irradiation on the TSC spectra of epitaxial 4H-SiC MOSCAP devices is discussed. On non-irradiated samples, two TSC
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8c21a1d06fdcf331f3cc7207f7eeb7b
https://doi.org/10.4028/www.scientific.net/msf.645-648.469
https://doi.org/10.4028/www.scientific.net/msf.645-648.469
Autor:
Fritz J. Kub, Sarah K. Haney, Anant K. Agarwal, H.L. Hughes, Eugene A. Imhoff, Marko J. Tadjer, Robert E. Stahlbush, P.J. McMarr, Karl D. Hobart
Publikováno v:
Journal of Electronic Materials. 39:517-525
Carrier traps in 4H-SiC metal–oxide–semiconductor (MOS) capacitor and transistor devices were studied using the thermally stimulated current (TSC) method. TSC spectra from p-type MOS capacitors and n-channel MOS field-effect transistors (MOSFETs)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2a7aaefebf45b38273aaea564af33da1
https://doi.org/10.1007/s11664-009-1058-y
https://doi.org/10.1007/s11664-009-1058-y
Autor:
Anant K. Agarwal, Charles Scozzie, Bruce Geil, Aivars J. Lelis, Sei Hyung Ryu, Sarah K. Haney, Sarit Dhar
Publikováno v:
Materials Science Forum. :743-748
In this paper, we present the effects of MOS channel processing on the threshold voltage and the MOS field effect mobility of 4H-SiC MOSFETs. By increasing the p-well doping concentration by two orders of magnitude, the threshold voltage could be shi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::afb16482a592b3f73170f30960335b88
https://doi.org/10.4028/www.scientific.net/msf.615-617.743
https://doi.org/10.4028/www.scientific.net/msf.615-617.743
Autor:
Jim Richmond, Q. Jon Zhang, Craig Capell, Mrinal K. Das, Matthew Donofrio, Fatima Husna, Charlotte Jonas, Jack Clayton, Robert Callanan, Sarah K. Haney, Joseph John Sumakeris
Publikováno v:
Materials Science Forum. :1183-1186
For the first time, high power 4H-SiC n-IGBTs have been demonstrated with 13 kV blocking and a low Rdiff,on of 22 mWcm2 which surpasses the 4H-SiC material limit for unipolar devices. Normally-off operation and >10 kV blocking is maintained up to 200
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a0aeb214ccb7be52f205a49c570f7a93
https://doi.org/10.4028/www.scientific.net/msf.600-603.1183
https://doi.org/10.4028/www.scientific.net/msf.600-603.1183
Autor:
Qing Chun Jon Zhang, Anant K. Agarwal, Sei Hyung Ryu, Sarah K. Haney, Robert E. Stahlbush, Fatima Husna
Publikováno v:
Materials Science Forum. :1127-1130
This paper presents the effect of recombination-induced stacking faults on the drift based forward conduction and leakage currents of high voltage 4H-SiC power devices. To show the effects, IV characteristics of a 4H-SiC 10 kV DMOSFET and a 4H-SiC 4
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f242ff207e3b830ef909fea911f61bab
https://doi.org/10.4028/www.scientific.net/msf.600-603.1127
https://doi.org/10.4028/www.scientific.net/msf.600-603.1127
Autor:
Anant K. Agarwal, Sarah K. Haney
Publikováno v:
Journal of Electronic Materials. 37:646-654
There has been a rapid improvement in SiC materials and power devices during the last few years. However, the materials community has overlooked some critical issues, which may threaten the emergence of SiC power devices in the coming years. Some of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ec24843e49dbf0fe604cf82a06fbe7dc
https://doi.org/10.1007/s11664-007-0321-3
https://doi.org/10.1007/s11664-007-0321-3
Publikováno v:
Materials Science Forum. :667-670
Optimization of the thermally oxidized 4H-SiC MOS interface has produced p-channel lateral MOSFETs with hole inversion layer mobility as high as 10 cm2/Vs. This has been accomplished by identifying the 1200oC Dry, 950oC Wet (un-nitrided) oxidation as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d44d029d9ae018d5573d23f765d00c5
https://doi.org/10.4028/www.scientific.net/msf.556-557.667
https://doi.org/10.4028/www.scientific.net/msf.556-557.667
Publikováno v:
IEEE Electron Device Letters. 28:587-589
The phenomenon of recombination-induced stacking faults in high-voltage p-n diodes in SiC has been previously shown to increase the forward voltage drop due to reduction of minority carrier lifetime. In this paper, it has been shown that, for the fir
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::71b81000724da886ab8b461341300614
https://doi.org/10.1109/led.2007.897861
https://doi.org/10.1109/led.2007.897861