Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Sarah E. Armstrong"'
Autor:
Joseph Rausch, Arielle H. Sheftall, Xin Feng, Jeffrey A. Bridge, David A. Brent, Sarah E. Armstrong, Kathryn A. Kerns, Fatima Vakil
Publikováno v:
Journal of psychiatric research. 138
Objective Suicidal behavior (SB) in young children is rare yet in 2019, suicide was the fifth leading cause of death in 5-12-year-old youth. Understanding the risks associated with childhood suicidal ideation (SI) and SB will determine which factors
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7229ea05cd48fb79a244aa52843baaad
https://pubmed.ncbi.nlm.nih.gov/33930615
https://pubmed.ncbi.nlm.nih.gov/33930615
Autor:
Sarah E. Armstrong, T. Daniel Loveless, Nick M. Atkinson, Jeffrey S. Kauppila, R. W. Blaine, W. Tim Holman, Lloyd W. Massengill
Publikováno v:
IEEE Transactions on Nuclear Science. 59:803-810
Novel RHBD techniques are described that utilize charge sharing to mitigate single-event voltage transients in a folded cascode operational amplifier. These techniques are analyzed using a new layout aware single-event model with the Cadence Spectre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::98289693ee7cd37c1ca3137905772fe0
https://doi.org/10.1109/tns.2012.2200502
https://doi.org/10.1109/tns.2012.2200502
Autor:
Casey H. Rice, J. David Ingalls, Casey C. Hedge, Ken Bole, Holly Bradley, Ethan Johnson, Brian D. Olson, James Staggs, Patrick L. Cole, Adam R. Duncan, Sarah E. Armstrong, W.M. Shedd
Publikováno v:
2015 IEEE Radiation Effects Data Workshop (REDW).
Commercial gallium nitride (GaN) high-electron mobility transistors (HEMTs) are tested in the radio frequency (RF) spectrum at heavy ion facilities to explore space environment stresses on these emerging technologies. Findings indicate that gate leak
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b4b39376d08a21b5b2ae4c2d2d37707e
https://doi.org/10.1109/redw.2015.7336715
https://doi.org/10.1109/redw.2015.7336715
Autor:
Casey H. Rice, Brian D. Olson, Casey C. Hedge, J. David Ingalls, Adam R. Duncan, Patrick L. Cole, Sarah E. Armstrong
Publikováno v:
2015 IEEE Radiation Effects Data Workshop (REDW).
Commercial gallium nitride high-electron mobility transistors are tested at Texas A&M University cyclotron. Degradation of gate and drain currents is characterized.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::181a52f90e8715d348cde667f74d482f
https://doi.org/10.1109/redw.2015.7336720
https://doi.org/10.1109/redw.2015.7336720