Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Sarah, Rafiq"'
Autor:
Jubin Hazra, Minhaz Ibna Abedin, Karsten Beckmann, Sumit Kumar Jha, Maximilian Liehr, Jodh S. Pannu, Nathaniel C. Cady, Sarah Rafiq
Publikováno v:
IEEE Transactions on Circuits and Systems I: Regular Papers. 68:2900-2910
Resistive random-access memory (ReRAM) memristors are promising candidates for various compute in memory and flow-based computing approaches. As an alternative to traditional von Neumann computation, flow-based computing avoids serial movement of dat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da1c46ea9cc424f54a7e2adf8de8b191
https://doi.org/10.1109/tcsi.2021.3072210
https://doi.org/10.1109/tcsi.2021.3072210
Publikováno v:
2022 IEEE 31st Microelectronics Design & Test Symposium (MDTS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dc81848d18cc5df494df9b439e91e31a
https://doi.org/10.1109/mdts54894.2022.9826965
https://doi.org/10.1109/mdts54894.2022.9826965
Autor:
Dwaipayan Chakraborty, Steven Lawrence Fernandes, Sunny Raj, Jodh Singh Pannu, Sumit Kumar Jha, Nathaniel C. Cady, Sarah Rafiq
Publikováno v:
IEEE Transactions on Circuits and Systems II: Express Briefs. 67:961-965
We design and fabricate a flow-based circuit for edge detection in images that exploits device-level parallelism in nanoscale memristor crossbars. In our approach, a corpus of human-labeled edges in BSDS500 images is used to learn an edge detection f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::559c5009f15af91aa95ea42c9384a114
https://doi.org/10.1109/tcsii.2020.2984155
https://doi.org/10.1109/tcsii.2020.2984155
Autor:
Luz Angela Torres-de la Roche, Sarah Rafiq, Rajesh Devassy, Hugo Christian Verhoeven, Sven Becker, Rudy Leon De Wilde
Publikováno v:
Journal of Clinical Medicine, Vol 11, Iss 839, p 839 (2022)
Minimally invasive interventions for myomata treatment have gained acceptance due to the possibility of preserving fertility with reduced trauma induced by laparotomy as way of entrance. There are insufficient data regarding outcomes of high intensit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5f8c82709ca9c6a79d0c786ee9663d2c
https://www.mdpi.com/2077-0383/11/3/839
https://www.mdpi.com/2077-0383/11/3/839
Autor:
Maximilian Liehr, Sarah Rafiq, Jubin Hazra, Minhaz Ibna Abedin, Nathaniel C. Cady, Karsten Beckmann
Publikováno v:
MWSCAS
Error-correcting codes (ECC) are widely used during data transfer in wireless communication systems as well as in computer memory architectures. The error-correcting process is based on sending data with extra parity bits and decoding the received da
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::27ba38e0105de03792dd0b1f5367d02c
https://doi.org/10.1109/mwscas47672.2021.9531717
https://doi.org/10.1109/mwscas47672.2021.9531717
Autor:
Mohamed Hadi Habaebi, Sarah Rafiq, Naimul Mukit, Sarah Yasmin, Islam Md. Rafiqul, Rauful Nibir, Abdinasir S. O
Publikováno v:
Bulletin of Electrical Engineering and Informatics. 8:1004-1013
In this paper, a multiband stack series array antenna is designed in order to attain solutions for the future 28 GHz Ka-band application. Double layer substrate Technology is utilized to accomplish multiple resonant frequencies with higher data trans
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4b860a075187156b989f5b4bd96195d4
https://doi.org/10.11591/eei.v8i3.1519
https://doi.org/10.11591/eei.v8i3.1519
Publikováno v:
2020 IEEE International Integrated Reliability Workshop (IIRW).
In this work, we have improved switching reliability of Hafnium Oxide (HfO 2 ) based CMOS integrated RRAM devices by tuning Atomic Layer Deposition (ALD) Co-reactant pulse time for HfO 2 switching layer deposition. Three different pulse times for H 2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6299d7ed1fa0cfcf0cdf0258134cce5f
https://doi.org/10.1109/iirw49815.2020.9312877
https://doi.org/10.1109/iirw49815.2020.9312877
Publikováno v:
2020 IEEE Student Conference on Research and Development (SCOReD).
As CMOS scaling approaches its limitation, the power consumption of computations performed using the von Neumann architecture have become an issue. As a promising alternative solution, Resistive Random Access Memory (ReRAM) overcomes this bottleneck
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::137a5b5ee9dc2b925bb1f5bfe5738c6a
https://doi.org/10.1109/scored50371.2020.9250970
https://doi.org/10.1109/scored50371.2020.9250970
Autor:
Jodh Singh Pannu, Sumit Kumar Jha, Sarah Rafiq, Sunny Raj, Steven Lawrence Fernandes, Nathaniel C. Cady, Dwaipayan Chakraborty
Publikováno v:
2019 IEEE Albany Nanotechnology Symposium (ANS).
Detection of edges in images is an elementary operation in computer vision that can greatly benefit from an implementation with a low power-delay product. In this paper, we propose a new approach for designing nanoscale memristor crossbars that can i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c56f9b8bcd515bc2d94de4058d51ec0d
https://doi.org/10.1109/ans47466.2019.8963745
https://doi.org/10.1109/ans47466.2019.8963745
Publikováno v:
2019 IEEE International Integrated Reliability Workshop (IIRW).
In this work, we have addressed cycle to cycle switching variability by modifying a key step in CMOS integrated RRAM devices fabrication, namely the atomic layer deposition (ALD) process used to deposit the HfO 2 switching layer. Two different HfO 2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::06b9f519209139c821f573e9c5c1013b
https://doi.org/10.1109/iirw47491.2019.8989872
https://doi.org/10.1109/iirw47491.2019.8989872