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Charge noise can be detrimental to the operation of quantum dot (QD) based semiconductor qubits. We study the low-frequency charge noise by charge offset drift measurements for Si-MOS devices with intentionally implanted donors near the QDs. We show
Externí odkaz:
http://arxiv.org/abs/1801.07776
Publikováno v:
Phys. Rev. Applied 11, 014001 (2019)
We report on the challenges and limitations of direct coupling of the magnetic field from a circuit resonator to an electron spin bound to a donor potential. We propose a device consisting of a trilayer lumped-element superconducting resonator and a
Externí odkaz:
http://arxiv.org/abs/1702.02210
Autor:
Sarabi, Bahman, Ramanayaka, Aruna N., Burin, Alexander L., Wellstood, Frederick C., Osborn, Kevin D.
Publikováno v:
Phys. Rev. Lett. 116, 167002 (2016)
Material-based two-level systems (TLSs), appearing as defects in low-temperature devices including superconducting qubits and photon detectors, are difficult to characterize. In this study we apply a uniform dc-electric field across a film to tune th
Externí odkaz:
http://arxiv.org/abs/1501.05865
Autor:
Sarabi, Bahman, Ramanayaka, Aruna N., Burin, Alexander L., Wellstood, Frederick C., Osborn, Kevin D.
Publikováno v:
Appl. Phys. Lett. 106.17 (2015): 172601
Random tunneling two-level systems (TLSs) in dielectrics have been of interest recently because they adversely affect the performance of superconducting qubits. The coupling of TLSs to qubits has allowed individual TLS characterization, which has pre
Externí odkaz:
http://arxiv.org/abs/1405.0264
Akademický článek
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Autor:
Sarabi, Bahman
In this dissertation, I introduce a novel method for measuring individual nanoscale two-level systems (TLSs) in amorphous solids based on strong direct coupling between a TLS and a cavity. I describe power- and temperature-dependent analysis of indiv
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f690b32f1d5d6b7291f835583ed0ef0d