Zobrazeno 1 - 10
of 61
pro vyhledávání: '"Sarabdeep, Singh"'
Publikováno v:
Micromachines, Vol 14, Iss 7, p 1357 (2023)
This paper examines the performance of a Gate-Engineered Gate-All-Around Charge Plasma Nanowire Field Effect Transistor (GAA-DMG-GS-CP NW-FET) and the implementation of a common source (CS) amplifier circuit. The proposed GAA-DMG-GS-CP NW-FET incorpo
Externí odkaz:
https://doaj.org/article/738e3558644a43f4a463561657abace5
Publikováno v:
Journal of Electronic Materials. 52:3253-3263
Autor:
Zhi Zhang, Amar Jyoti, Bindu Balakrishnan, Monica Williams, Sarabdeep Singh, Diane C. Chugani, Sujatha Kannan
Publikováno v:
Neurobiology of Disease, Vol 111, Iss , Pp 153-162 (2018)
Background: Maternal infection is a risk factor for periventricular leukomalacia and cerebral palsy (CP) in neonates. We have previously demonstrated hypomyelination and motor deficits in newborn rabbits, as seen in patients with cerebral palsy, foll
Externí odkaz:
https://doaj.org/article/487c8dcb06644e2bbfc053668d9bf7c8
Autor:
Elizabeth Nance, Siva P. Kambhampati, Elizabeth S. Smith, Zhi Zhang, Fan Zhang, Sarabdeep Singh, Michael V. Johnston, Rangaramanujam M. Kannan, Mary E. Blue, Sujatha Kannan
Publikováno v:
Journal of Neuroinflammation, Vol 14, Iss 1, Pp 1-19 (2017)
Abstract Background Rett syndrome (RTT) is a pervasive developmental disorder that is progressive and has no effective cure. Immune dysregulation, oxidative stress, and excess glutamate in the brain mediated by glial dysfunction have been implicated
Externí odkaz:
https://doaj.org/article/63097af04e4e4027a06bb1dcd293485c
Publikováno v:
Micromachines; Volume 14; Issue 7; Pages: 1357
This paper examines the performance of a Gate-Engineered Gate-All-Around Charge Plasma Nanowire Field Effect Transistor (GAA-DMG-GS-CP NW-FET) and the implementation of a common source (CS) amplifier circuit. The proposed GAA-DMG-GS-CP NW-FET incorpo
Autor:
Sarabdeep Singh, Sunny Anand, Shradhya Singh, Ravi Ranjan, Navaneet Kumar Singh, Naveen Kumar
Publikováno v:
Journal of Electronic Materials. 51:196-206
A negative-capacitance (NC)-induced junctionless gate-all-around (GAA) nanowire field-effect transistor (FET) is proposed by deploying the ferroelectric material (FE) lead zirconium titanate (PZT) between the gate electrode and metal, referred to as
Autor:
Samhati Mondal, Nauder Faraday, Wei Dong Gao, Sarabdeep Singh, Sachidanand Hebbar, Kimberly N. Hollander, Thomas S. Metkus, Lee A. Goeddel, Maria Bauer, Brian Bush, Brian Cho, Stephanie Cha, Stephanie O. Ibekwe, Domagoj Mladinov, Noah S. Rolleri, Laeben Lester, Jochen Steppan, Rosanne Sheinberg, Nadia B. Hensley, Anubhav Kapoor, Jeffrey M. Dodd-o
Publikováno v:
Journal of Clinical Medicine; Volume 11; Issue 14; Pages: 3980
(1) Importance: Abnormal left ventricular (LV) diastolic function, with or without a diagnosis of heart failure, is a common finding that can be easily diagnosed by intra-operative transesophageal echocardiography (TEE). The association of diastolic
Autor:
Sarabdeep Singh, Ashish Raman
Publikováno v:
Silicon. 14:1297-1307
The unique properties like wide band gap and high electron mobility makes GaN an interesting material to be used in building devices at the nanoscale in recent times. This paper first time proposed a charge plasma (CP) based dopingless gate all aroun
Publikováno v:
Silicon. 14:989-996
In this paper, gate all around (GAA) nanowire P-channel FET label free biosensor is proposed with cavity. Proposed structure is label free so it doesn’t require selective material for specific biomolecule enzymes. High surface to volume ratio provi
Publikováno v:
Silicon. 13:4633-4640
In this treatise, we have proposed a Single Material Gate–Dual Gate Impact Ionization Metal Oxide Semiconductor (SMG DG-IMOS) based Pressure Sensor. The pressure sensor has the most notable role in both the electrical and mechanical emerging fields