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pro vyhledávání: '"Sara Novaglia"'
Autor:
Radovan Kopecek, Jayaprasad Arumughan, Roman Petres, Simona Binetti, Sara Novaglia, Aleksander Prokopenko, Joris Libal, Maurizio Acciarri
Publikováno v:
Journal of Applied Physics. 104:104507
In this work we present a study of a p-type Czochralski-grown Si ingot which was grown using 10% solar grade silicon (SoG-Si). As the SoG-Si contains a relatively high concentration of impurities including phosphorus, the electrical properties of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c21b83806b092398408f0104f972fb66
https://doi.org/10.1063/1.3021300
https://doi.org/10.1063/1.3021300
