Transient Thermoreflectance for Gate Temperature Assessment in Pulse Operated GaN-Based HEMTs

Autor: Helmut Jung, Sara Martin-Horcajo, Hervé Blanck, Martin Kuball, Benoit Lambert, James W Pomeroy

Publikováno v: Martin Horcajo, S, Pomeroy, J, Lambert, B, Jung, H, Blanck, H & Kuball, M 2016, ' Transient Thermoreflectance for Gate Temperature Assessment in Pulse Operated GaN-based HEMTs ', IEEE Electron Device Letters, vol. 37, no. 9, pp. 1197-1200 . https://doi.org/10.1109/LED.2016.2595400

An experimental method to measure the gate metal temperature of GaN-based high electron mobility transistors is demonstrated. The technique is based on transient thermoreflectance measurements performed from the backside of the device. The thermorefl

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4c404f1e5a0f3dea81ee0da73fbb15be
https://doi.org/10.1109/led.2016.2595400

Extreme ultraviolet detection using AlGaN-on-Si inverted Schottky photodiodes

Autor: Jean-Yves Duboz, Sara Martin Horcajo, Ali BenMoussa, Fabrice Semond, Robert Mertens, Joachim John, Peter Verhoeve, Kiki Minoglou, Pawel E. Malinowski, Eric Frayssinet, Marco Esposito, Chris Van Hoof, B. Giordanengo, Piet De Moor

Publikováno v: Applied Physics Letters, ISSN 0003-6951, 2011, Vol. 98, No. 14
Archivo Digital UPM
Universidad Politécnica de Madrid

We report on the fabrication of aluminum gallium nitride (AlGaN) Schottky diodes for extreme ultraviolet (EUV) detection. AlGaN layers were grown on silicon wafers by molecular beam epitaxy with the conventional and inverted Schottky structure, where

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::66dbc7a406e71d18c0aefabfa266361e
https://doi.org/10.1063/1.3576914