Zobrazeno 1 - 10
of 38
pro vyhledávání: '"Sara Fathipour"'
Autor:
Sara Fathipour, Sergio Fabian Almeida, Zhixin Alice Ye, Bivas Saha, Farnaz Niroui, Tsu-Jae King Liu, Junqiao Wu
Publikováno v:
AIP Advances, Vol 9, Iss 5, Pp 055329-055329-5 (2019)
To enable energy-efficient electronic devices for the future, nano-electro-mechanical (NEM) relays are promising due to their high ON/OFF current ratio and potential for low operating voltage. To minimize hysteresis and, consequently, relay operating
Externí odkaz:
https://doaj.org/article/a0de9edcbb134911b29f41d1208ef2f3
Autor:
Rupert Schreiner, T. V. Shubina, Sara Fathipour, Andreas K. Hüttel, R. Lawrowski, Maja Remškar, Alan Seabaugh
Publikováno v:
Israel Journal of Chemistry. 62
Autor:
Maomao, Liu, Sichen, Wei, Simran, Shahi, Hemendra Nath, Jaiswal, Paolo, Paletti, Sara, Fathipour, Maja, Remškar, Jun, Jiao, Wansik, Hwang, Fei, Yao, Huamin, Li
Publikováno v:
Nanoscale. 12(33)
High contact resistance is one of the primary concerns for electronic device applications of two-dimensional (2D) layered semiconductors. Here, we explore the enhanced carrier transport through metal-semiconductor interfaces in WS
Autor:
Paolo Paletti, Wan Sik Hwang, Maja Remškar, Hemendra Nath Jaiswal, Maomao Liu, Sichen Wei, Jun Jiao, Sara Fathipour, Hua-Min Li, Simran Shahi, Fei Yao
High contact resistance is one of the primary concerns for electronic device applications of two-dimensional (2D) layered semiconductors. Here, we explore the enhanced carrier transport through metal-semiconductor interfaces in WS2 field effect trans
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9ea316d4dccc36c74d38adbab363b9ce
http://arxiv.org/abs/2001.05105
http://arxiv.org/abs/2001.05105
Autor:
Hua-Min Li, Alan Seabaugh, Andrew C. Kummel, Cristobal Alessandri, Maja Remškar, Sara Fathipour, Iljo Kwak
Publikováno v:
IEEE Transactions on Electron Devices. 64:5217-5222
A back-gated multilayer nanoribbon molybdenum disulfide (MoS2) transistor grown by chemical vapor transport and doped using polyethylene oxide cesium perchlorate is fabricated and characterized. Ions in the polymer dielectric are directed by side gat
Akademický článek
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Publikováno v:
Wireless Personal Communications. 95:2611-2624
Peer-to-peer network is organized on top of another network as an overlay network. Super peer network is one of the peer-to-peer networks. A super peer, in a super peer based network, is a peer that has more responsibility than other peers have and i
Autor:
Alan Seabaugh, Hua-Min Li, Wan Sik Hwang, Maja Remškar, Simran Shahi, Sara Fathipour, Maomao Liu
Publikováno v:
2018 IEEE 13th Nanotechnology Materials and Devices Conference (NMDC).
Metal-semiconductor (MS) contacts were changed from Schottky to Ohmic in synthesized tungsten disulfide (WS 2 ), due to Cu doping during the synthesis. Significant reductions of contact barrier and resistance were achieved. A statistical study shows
Publikováno v:
Journal of Applied Physics. 127:065705
We investigate the channel length dependence of the electrical characteristics of chemical vapor transport (CVT)-grown MoS 2 nanoribbon (NR) Schottky barrier field-effect transistors to provide insights into the transport properties of such nanostruc
Publikováno v:
International Journal of Communication Systems. 33:e4296