Luminescence studies on nitride quaternary alloys double quantum wells

Autor: Guilherme Matos Sipahi, L. M. R. Scolfaro, O. F. P. dos Santos, E. F. da Silva, Sara C. P. Rodrigues

Publikováno v: Applied Surface Science. 254:7790-7793

We present theoretical photoluminescence (PL) spectra of undoped and p-doped AlxIn1−x−yGayN/AlXIn1−X−YGaYN double quantum wells (DQWs). The calculations were performed within the k.p method by means of solving a full eight-band Kane Hamiltoni

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::116d65f29ca88102709c0d1fd4fcec32
https://doi.org/10.1016/j.apsusc.2008.02.034

Spin-polarized transport in II-VI diluted magnetic semiconductors superlattices

Autor: Sara C. P. Rodrigues, Guilherme Matos Sipahi, J.L. Gomes, E. F. da Silva, Luisa M. Scolfaro

Publikováno v: Repositório Institucional da USP (Biblioteca Digital da Produção Intelectual)
Universidade de São Paulo (USP)
instacron:USP

We studied the spin-polarized charge densities in II–VI-based diluted magnetic superlattices formed of p-doped ZnTe:Mg/ZnTe:TM/ZnTe:Mg non-magnetic/magnetic/non-magnetic layers, with TM standing for transition metal. The calculations were performed

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2d2e68b63ea591a42c688c9052a69497

Spin-polarization effects in homogeneous and non-homogeneous diluted magnetic semiconductor heterostructures

Autor: Sara C. P. Rodrigues, Eronides F. da Silva, Luisa M. Scolfaro, Guilherme Matos Sipahi

Publikováno v: Repositório Institucional da USP (Biblioteca Digital da Produção Intelectual)
Universidade de São Paulo (USP)
instacron:USP

Spin polarization is a key characteristic in developing spintronic devices. Diluted magnetic heterostructures (DMH), where subsequent layers of conventional and diluted magnetic semiconductors (DMS) are alternate, are one of the possible ways to obta

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::700a6b004eeaa99b65bd38e17c26a752

Study of the vertical transport in p-doped superlattices based on group III-V semiconductors

Autor: Guilherme Matos Sipahi, Osmar Fp dos Santos, Luisa M. Scolfaro, Eronides F. da Silva, Sara C. P. Rodrigues

Publikováno v: Nanoscale Research Letters
Repositório Institucional da USP (Biblioteca Digital da Produção Intelectual)
Universidade de São Paulo (USP)
instacron:USP

The electrical conductivity σ has been calculated for p-doped GaAs/Al0.3Ga0.7As and cubic GaN/Al0.3Ga0.7N thin superlattices (SLs). The calculations are done within a self-consistent approach to the k → ⋅ p → theory by means of a full six-band

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b4e0e5b0c1f736653865db0a58bb6855