Výsledky vyhledávání - "Saori Kashiwada"

Periodic Fluctuations of Switching Probability in Spin-Transfer Magnetization Switching in Magnetic Tunnel Junctions

Autor: Masayuki Takagishi, Yoshishige Suzuki, Daisuke Saida, Minori Goto, Miyoshi Fukumoto, Tadaomi Daibou, Saori Kashiwada, Megumi Yakabe, Shinji Miwa, Ito Junichi, Yuma Jibiki

Publikováno v: IEEE Transactions on Magnetics. 54:1-5

The detailed characteristics of magnetization switching in MgO-based magnetic tunnel junctions (MTJs) of diameters in the range of 21–57 nm with perpendicular magnetization are investigated by using pulses of durations in the range of 1–30 ns. Pe

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8e22e1a488b3e263f0eaaa8eba647ef4
https://doi.org/10.1109/tmag.2018.2839086

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$1\times$ - to $2\times$ -nm perpendicular MTJ Switching at Sub-3-ns Pulses Below $100~\mu$ A for High-Performance Embedded STT-MRAM for Sub-20-nm CMOS

Autor: Hiroki Noguchi, Miyoshi Fukumoto, Megumi Yakabe, Tadaomi Daibou, Shinobu Fujita, Junichi Ito, Saori Kashiwada, Shinji Miwa, Yoshishige Suzuki, Keiko Abe, Daisuke Saida

Publikováno v: IEEE Transactions on Electron Devices. 64:427-431

Magnetization switching is confirmed for sub-3-ns pulses below $100~\mu \text{A}$ in perpendicular magnetic tunnel junctions (MTJs) down to 16 nm in diameter. The magnetoresistance ratio exceeded 150%, satisfying requirements for fast read conditions

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::83bee4b1ae63dd8bc4c56d4635f4ef8f
https://doi.org/10.1109/ted.2016.2636326

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1×- to 2×-nm MTJ switching at sub-3 ns pulses with compatible current in sub-20 nm CMOS for high performance embedded STT-MRAM

Autor: Saori Kashiwada, Shinji Miwa, Miyoshi Fukumoto, Tadaomi Daibou, Hiroki Noguchi, Megumi Yakabe, Yoshishige Suzuki, Shinobu Fujita, Junichi Ito, Keiko Abe, Daisuke Saida

Publikováno v: 2017 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA).

Magnetization switching was confirmed for sub-3-ns pulses below 100 µA in pMTJs down to 16 nm in diameter. The MR ratio exceeded 150%, satisfying requirements for fast read conditions. Using sub-30-nm MTJs, write-error rates of up to an order of −

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9bc9db5870c52fcfc5375c8efcd2eea5
https://doi.org/10.1109/vlsi-tsa.2017.7942491

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Sub-3 ns pulse with sub-100 µA switching of 1x–2x nm perpendicular MTJ for high-performance embedded STT-MRAM towards sub-20 nm CMOS

Autor: Shinobu Fujita, Junichi Ito, Tadaomi Daibou, Shinji Miwa, Yoshishige Suzuki, Hiroki Noguchi, Megumi Yakabe, Naoki Hase, Daisuke Saida, Miyoshi Fukumoto, Saori Kashiwada

Publikováno v: 2016 IEEE Symposium on VLSI Technology.

A novel perpendicular magnetic tunnel junction (MTJ) is developed that can be switched using pulse widths of around 1 ns and currents of less than 100 µA. This paper presents the first demonstration in novel achievement of fast switching, low power

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3a39a6a5873ecb60bd5cfae7d4705fd5
https://doi.org/10.1109/vlsit.2016.7573412

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Feasibility study of a semiconductor quantum bit structure based on a spin FET embedded with self-assembled InAs quantum dots

Autor: Takashi Matsuda, Saori Kashiwada, Kanji Yoh

Publikováno v: Journal of Crystal Growth. :785-788

As a physical realization of a quantum computer, we proposed and investigated a stacked quantum dots system buried in adjacent to the channel of a spin field-effect transistor (FET). In this system, the spin state of the edge quantum dot nearest to t

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c104fdad98d2968f193b7ee8b31f460b
https://doi.org/10.1016/j.jcrysgro.2006.11.174

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Nanoscaled systems studied by Mössbauer spectroscopy: Fe/Tb multilayer contacts on InAs(001)

Autor: Werner Keune, Marhoun Ferhat, Kanji Yoh, E. Schuster, Saori Kashiwada, R. Peters

Publikováno v: Superlattices and Microstructures. 41:81-92

The successful fabrication and characterization of ferromagnetic Fe/Tb multilayer contacts with perpendicular magnetic anisotropy on clean and well-ordered InAs(001) surfaces is reported. First, an epitaxial 57Fe(001) thin film was grown directly on

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7cbca374cf84b101908070e903b4062f
https://doi.org/10.1016/j.spmi.2006.10.004

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Circuit techniques in realizing voltage-generator-less STT MRAM suitable for normally-off-type non-volatile L2 cache memory

Autor: Kazutaka Ikegami, Saori Kashiwada, S. Fujita, Hiroyuki Hara, Y. Kato, Yasuo Unekawa, Keiko Abe, Daisuke Saida, Ito Junichi, Eiji Kitagawa, Keiichi Kushida, Hiroki Noguchi, Chikayoshi Kamata, Naoharu Shimomura, Atsushi Kawasumi

Publikováno v: 2013 5th IEEE International Memory Workshop.

Circuit techniques for energy-efficient STT MRAM, which is suitable for replacing SRAM L2 cache memories, are proposed. The waking-up from the power-down mode without any cycle penalties becomes possible by eliminating the voltage generator even at h

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::84a08d58bb4381eb7b5756cff8105dd1
https://doi.org/10.1109/imw.2013.6582102

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Impact of ultra low power and fast write operation of advanced perpendicular MTJ on power reduction for high-performance mobile CPU

Autor: Eiji Kitagawa, Saori Kashiwada, Chikayoshi Kamata, S. Fujita, Naoharu Shimomura, Hiroaki Yoda, Ito Junichi, Hiroki Noguchi, Tadaomi Daibou, Y. Kato, Keiko Abe, Kumiko Nomura, Kazutaka Ikegami

Publikováno v: 2012 International Electron Devices Meeting.

We demonstrated lower power consumption of mobile CPU by replacing high-performance (HP)-SRAMs with spin transfer torque (STT)-MRAMs using perpendicular (p)-MTJ. The key points that enable the low power consumption are adapting run time power gating

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3e638971fd0fc433893647714b349df2
https://doi.org/10.1109/iedm.2012.6479129

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State tomography of a chain of qubits embedded in a spin field-effect transistor via repeated spin-blockade measurements on the edge qubit

Autor: Kazuya Yuasa, Kosuke Okano, Kanji Yoh, Hiromichi Nakazato, Saori Kashiwada

Publikováno v: Physical Review B. 79

As a possible physical realization of a quantum information processor, a system with stacked self-assembled InAs quantum dots buried in GaAs in adjacent to the channel of a spin field-effect transistor has been proposed. In this system, only one of t

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9616847d0028845ec833c4c4feb7805a
https://doi.org/10.1103/physrevb.79.075318

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State Tomography of Layered Qubits via Spin Blockade Measurements on the Edge Qubit in a Spin Field-Effect Transistor Structure Embedded with Quantum Dots

Autor: Hiromichi Nakazato, Kanji Yoh, Kazuya Yuasa, K. Okano, Saori Kashiwada

Publikováno v: AIP Conference Proceedings.

As a promising physical realization of a quantum computer, we discuss a system with stacked quantum dots buried in adjacent to the channel of a spin field‐effect transistor. In this scheme, one can measure only the edge qubit (nearest to the channe

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::351417aae230d676ceb778d75f4de1a1
https://doi.org/10.1063/1.2730285

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