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pro vyhledávání: '"Sanywon Ryu"'
Autor:
Gon-Ho Kim, Nam-Kyun Kim, Sanywon Ryu, Sangmin Jeong, Seolhye Park, Ji-Won Kwon, Yunchang Jang, Hyun-Joon Roh
Publikováno v:
Current Applied Physics. 19:1068-1075
A phenomenology-based virtual metrology (VM) for monitoring SiO2 etching depth was proposed by Park (2015). It achieved high prediction accuracy by introducing newly developed plasma information (PI) variables as designated inputs, called PI-VM. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bbda073d5f09a336085a7b93a9f93ced
https://doi.org/10.1016/j.cap.2019.06.001
https://doi.org/10.1016/j.cap.2019.06.001
