Zobrazeno 1 - 10
of 52
pro vyhledávání: '"Santoruvo, A."'
Autor:
Armano, M., Audley, H., Baird, J., Binetruy, P., Born, M., Bortoluzzi, D., Castelli, E., Cavalleri, A., Cesarini, A., Cruise, A. M., Danzmann, K., Silva, M. de Deus, Diepholz, I., Dixon, G., Dolesi, R., Ferraioli, L., Ferroni, V., Fitzsimons, E. D., Freschi, M., Gesa, L., Giardini, D., Gibert, F., Giusteri, R., Grimani, C., Grzymisch, J., Harrison, I., Heinzel, G., Hewitson, M., Hollington, D., Hoyland, D., Hueller, M., Inchauspé, H., Jennrich, O., Jetzer, P., Karnesis, N., Kaune, B., Korsakova, N., Killow, C. J., Liu, L., Lloro, I., Lobo, J. A., López-Zaragoza, J. P., Maarschalkerweerd, R., Mailland, F., Mance, D., Martín, V., Martin-Polo, L., Martin-Porqueras, F., Martino, J., Mateos, I., McNamara, P. W., Mendes, J., Mendes, L., Meshskar, N., Nofrarias, M., Paczkowski, S., Perreur-Lloyd, M., Petiteau, A., Pfeil, M., Pivato, P., Plagnol, E., Ramos-Castro, J., Reiche, J., Robertson, D. I., Rivas, F., Russano, G., Santoruvo, G., Sarra, P., Shaul, D., Slutsky, J., Sopuerta, C. F., Sumner, T., Texier, D., Thorpe, J. I., Trenkel, C., Vetrugno, D., Vitale, S., Wanner, G., Ward, H., Waschke, S., Wass, P. J., Weber, W. J., Wissel, L., Wittchen, A., Zweifel, P.
Publikováno v:
Phys. Rev. D 98, 062001 (2018)
The LISA Pathfinder charge management device was responsible for neutralising the cosmic ray induced electric charge that inevitably accumulated on the free-falling test masses at the heart of the experiment. We present measurements made on ground an
Externí odkaz:
http://arxiv.org/abs/1807.02435
Publikováno v:
IEEE Microwave and Wireless Components Letters. 30:66-69
Microwave zero-bias rectifiers are fast devices capable of rectifying RF signals without applied bias, which have applications ranging from RF power detection to terahertz imaging systems. In this letter, we present gated nanowire field-effect rectif
Publikováno v:
IEEE Electron Device Letters. 40:1171-1174
Laterally gated transistors have been proposed as an innovative device architecture in which a semiconducting channel is controlled by side gates. In this sense, the gate can either be in contact with the sidewalls or be separated by a gap. In the la
Autor:
Mohammad Samizadeh Nikoo, Armin Jafari, Nirmana Perera, Minghua Zhu, Giovanni Santoruvo, Elison Matioli
Publikováno v:
2020 IEEE International Conference on Plasma Science (ICOPS).
Akademický článek
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Autor:
Elison Matioli, Giovanni Santoruvo
Publikováno v:
IEEE Electron Device Letters. 38:1413-1416
In-plane-gate field-effect transistors (IPGFETs) offer an innovative device architecture in which the channel conductivity is modulated by the electric field from the 2D electron gas in the two adjacent in-plane gates, isolated by etched trenches. Th
Publikováno v:
IEEE Transactions on Electron Devices
In this paper, we present a detailed investigation of the impact of fin width ( ${w}_{\text {fin}}$ ) on tri-gate AlGaN/GaN metal–oxide–semiconductor high electron mobility transistors (MOSHEMTs). As ${w}_{\text {fin}}$ is reduced, the threshold
Autor:
Elison Matioli, Armin Jafari, Giovanni Santoruvo, Mohammad Samizadeh Nikoo, Minghua Zhu, Nirmana Perera
Publikováno v:
Nature. 580:E8-E8
Autor:
J. Martino, Domenico Giardini, Antoine Petiteau, Paul McNamara, Ian Harrison, S. Paczkowski, Carlos F. Sopuerta, Eric Plagnol, B. Kaune, Peter Wass, Henri Inchauspe, N. Korsakova, D. I. Robertson, Víctor S. Martín, J. Baird, Daniele Vetrugno, N. Meshskar, P. Sarra, Oliver Jennrich, T. J. Sumner, L. Liu, Ph. Jetzer, E. Castelli, J. Grzymisch, Gerhard Heinzel, S. Vitale, D. Shaul, H. Ward, P. Pivato, F. Rivas, Jacob Slutsky, Valerio Ferroni, G. Santoruvo, Michele Armano, Catia Grimani, M. Hueller, D. Hoyland, G. Dixon, M. Freschi, Ignacio Mateos, Lluis Gesa, Karsten Danzmann, Michael Perreur-Lloyd, Pierre Binétruy, Daniel Hollington, Nikolaos Karnesis, W. J. Weber, R. Maarschalkerweerd, M. de Deus Silva, F. Martin-Porqueras, P. Zweifel, Antonella Cavalleri, A. Wittchen, Gudrun Wanner, J. A. Lobo, Juan Ramos-Castro, James Ira Thorpe, Luigi Ferraioli, E. D. Fitzsimons, Heather Audley, R. Giusteri, M. Born, L. Wissel, Christian J. Killow, Markus Pfeil, Rita Dolesi, S. Waschke, L. Mendes, Ingo Diepholz, José F. F. Mendes, A. M. Cruise, M. Hewitson, D. Bortoluzzi, Miquel Nofrarías, J. P. López-Zaragoza, Ferran Gibert, L. Martin-Polo, J. Reiche, A. Cesarini, G. Russano, Davor Mance, D. Texier, Ivan Lloro, F. Mailland, C. Trenkel
Publikováno v:
Phys.Rev.D
Phys.Rev.D, 2018, 98 (6), pp.062001. ⟨10.1103/PhysRevD.98.062001⟩
Physical Review D
Physical Review D, American Physical Society, 2018, 98 (6), pp.062001. ⟨10.1103/PhysRevD.98.062001⟩
Recercat. Dipósit de la Recerca de Catalunya
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BASE-Bielefeld Academic Search Engine
UPCommons. Portal del coneixement obert de la UPC
Universitat Politècnica de Catalunya (UPC)
Phys.Rev.D, 2018, 98 (6), pp.062001. ⟨10.1103/PhysRevD.98.062001⟩
Physical Review D
Physical Review D, American Physical Society, 2018, 98 (6), pp.062001. ⟨10.1103/PhysRevD.98.062001⟩
Recercat. Dipósit de la Recerca de Catalunya
instname
BASE-Bielefeld Academic Search Engine
UPCommons. Portal del coneixement obert de la UPC
Universitat Politècnica de Catalunya (UPC)
International audience; The LISA Pathfinder charge management device was responsible for neutralizing the cosmic-ray-induced electric charge that inevitably accumulated on the free-falling test masses at the heart of the experiment. We present measur
Akademický článek
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