Zobrazeno 1 - 10
of 83
pro vyhledávání: '"Santo Martinuzzi"'
Publikováno v:
Progress in Photovoltaics: Research and Applications. 17:297-305
n-Type silicon wafers present some definite advantages for the photovoltaic industry, mainly due to the low capture cross sections of minority carriers for most metallic impurities. This peculiarity is beneficial for multicrystalline silicon (mc-Si)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e0a12c2af6de88abd55bc49e033335d9
https://doi.org/10.1002/pip.883
https://doi.org/10.1002/pip.883
Publikováno v:
Solar Energy Materials and Solar Cells
Solar Energy Materials and Solar Cells, 2007, 91 (13), pp.1172-1175. ⟨10.1016/j.solmat.2007.03.026⟩
Solar Energy Materials and Solar Cells, Elsevier, 2007, 91 (13), pp.1172-1175. ⟨10.1016/j.solmat.2007.03.026⟩
Solar Energy Materials and Solar Cells, 2007, 91 (13), pp.1172-1175. ⟨10.1016/j.solmat.2007.03.026⟩
Solar Energy Materials and Solar Cells, Elsevier, 2007, 91 (13), pp.1172-1175. ⟨10.1016/j.solmat.2007.03.026⟩
In cast multicrystalline silicon ingots impurity concentrations vary along the ingot height due to segregation phenomena during the directional solidification. It is expected that these concentrations are the highest at the top of the ingot which sol
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4848cdf4b2b497f51c73f10f704a0922
https://doi.org/10.1016/j.solmat.2007.03.026
https://doi.org/10.1016/j.solmat.2007.03.026
Autor:
Santo Martinuzzi
Publikováno v:
Reflets de la physique. :8-12
Apres une description sommaire des principaux phenomenes relatifs a la conversion photovoltaique de l’energie solaire par des cellules a jonction p-n, on detaille les proprietes des cellules au silicium, qui est actuellement le materiau le plus uti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ff7750398e5b40757765b3b9953b5bd
https://doi.org/10.1051/refdp/2007059
https://doi.org/10.1051/refdp/2007059
Publikováno v:
Solid State Phenomena. :525-530
In this paper it is shown that the metallic impurities are the main harmful defect in multicrystalline silicon (mc-Si) and that extended defects have only poor recombination strength when they are not decorated, like in float zone silicon wafers or i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::99ca470ec82f5eed8749cbbde17e47ad
https://doi.org/10.4028/www.scientific.net/ssp.108-109.525
https://doi.org/10.4028/www.scientific.net/ssp.108-109.525
Publikováno v:
Materials Science Forum. :509-512
Hydrogen is known to passivate donor and acceptor levels in SiC bulk, and also at the surface by forming bonds with Si atoms. Introduction of H atoms can then improve the electrical performance of Schottky diodes by reducing the metal-SiC interface s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0dad7e63e6641cb71449e968167e14d6
https://doi.org/10.4028/www.scientific.net/msf.457-460.509
https://doi.org/10.4028/www.scientific.net/msf.457-460.509
Autor:
Nicolas Auriac, Santo Martinuzzi
Publikováno v:
Journal of Physics: Condensed Matter. 14:13087-13094
Nanocavities are formed by He+-and H+-ion implantation in silicon single crystals, at the projected range Rp, after post-implantation annealing. The present paper deals with the characterization of deep trap levels associated with such defects. P-typ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b56b5652e8d9824aa2fffae6e6bb2604
https://doi.org/10.1088/0953-8984/14/48/354
https://doi.org/10.1088/0953-8984/14/48/354
Publikováno v:
Solar Energy Materials and Solar Cells. 72:101-107
The electromagnetic continuous pulling (EMCP) is a new growth process competing with directional solidification for the production of massive silicon ingots. The advantages of the EMCP are higher production rates, no crucible consumption and a more u
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9eaabde87cc50250bf8788a853b0e386
https://doi.org/10.1016/s0927-0248(01)00155-6
https://doi.org/10.1016/s0927-0248(01)00155-6
Publikováno v:
Solid State Phenomena. :297-302
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::230bbcf91d6f8e20e4eaf6210ade8b33
https://doi.org/10.4028/www.scientific.net/ssp.82-84.297
https://doi.org/10.4028/www.scientific.net/ssp.82-84.297
Publikováno v:
Journal of Applied Physics. 90:2806-2812
In silicon, implantation of He++ or H+ ions and subsequent annealing can lead to the formation of nanocavities below the implanted surface of the wafers. These nanocavities, which behave as trapping sites for metallic impurities, can be located near
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ad8eb68908267853df3d13ae10f5cedc
https://doi.org/10.1063/1.1394917
https://doi.org/10.1063/1.1394917
Autor:
Albert C. Thompson, A. Mohammed, W. Koch, M. Werner, Markus Rinio, G Lamble, H.-U. Hoefs, Isabelle Périchaud, C. Haessler, Santo Martinuzzi, Scott A. McHugo
Publikováno v:
Journal of Applied Physics. 89:4282-4288
In this study, we have utilized characterization methods to identify the nature of metal impurityprecipitates in low performance regions of multicrystalline silicon solar cells. Specifically, we ha ...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::70b7578d276172efe7f7fc67ce858263
https://doi.org/10.1063/1.1330552
https://doi.org/10.1063/1.1330552