Výsledky vyhledávání - "Santiago Boyeras"

Akademický článek

Analytic circuit model for thermal drying behavior of electronic inks

Autor: Gabriel Maroli, Santiago Boyeras, Hernan Giannetta, Sebastian Pazos, Joel Gak, Alejandro Raúl Oliva, María Alicia Volpe, Pedro Marcelo Julian, Felix Palumbo

Publikováno v: Frontiers in Electronics, Vol 3 (2023)

Understanding the sintering process of conductive inks is a fundamental step in the development of sensors. The intrinsic properties (such as thermal conductivity, resistivity, thermal coefficient, among others) of the printed devices do not correspo

Externí odkaz: https://doaj.org/article/ac3daf9e7f0c47d79df82c81353dd6e5

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On the Thermal Models for Resistive Random Access Memory Circuit Simulation

Autor: Felix Palumbo, Carol de Benito, Enrique Moreno, Stavros G. Stavrinides, D. Maldonado, Santiago Boyeras Baldomá, Rodrigo Picos, Jordi Suñé, G. González-Cordero, Leon O. Chua, Enrique Miranda, Mohamad Moner Al Chawa, Juan Bautista Roldán, Francisco Jiménez-Molinos

Publikováno v: Digibug: Repositorio Institucional de la Universidad de Granada
Universidad de Granada (UGR)
Nanomaterials
Nanomaterials, Vol 11, Iss 1261, p 1261 (2021)
Digibug. Repositorio Institucional de la Universidad de Granada
instname

This research was funded by Spanish Ministry of Science, Innovation and Universities, grant number TEC2017-84321-C4-3-R, TEC2017-84321-C4-4-R and by the Consejeria de Economia y Conocimiento de la Junta de Andalucia and European Regional Development

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ea59cd2284b9e600155ad22738beb0fe
http://hdl.handle.net/10481/69383

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Estudio de la degradación y ruptura de estructuras MOS basadas en óxidos high-k multicapas

Autor: Felix Palumbo, Santiago Boyeras Baldomá

Publikováno v: AJEA.

El crecimiento exponencial de la industria electrónica ha sido impulsado por un aumento en la densidad de transistores complementarios metal-óxido-semiconductor (CMOS). Pero la tecnología de transistores basada en Silicio está cerca de los límit

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::001c13f6b6d87a60dcd936735d226262
https://doi.org/10.33414/ajea.5.650.2020

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Temperature of Conductive Nanofilaments in Hexagonal Boron Nitride Based Memristors Showing Threshold Resistive Switching

Autor: Fernando L. Aguirre, Mario Lanza, Felix Palumbo, Yuanyuan Shi, Tianru Wu, Bin Yuan, Enrique Moreno, Santiago Boyeras, Eilam Yalon, Juan Bautista Roldán

Publikováno v: Advanced Electronic Materials. 8:2100580

This work has been supported by the Baseline funding scheme of the King Abdullah University of Science and Technology (KAUST) in Saudi Arabia, the Ministry of Science and Technology of China (Grant No. 2018YFE0100800), the National Natural Science Fo

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f393a56d4562ec8b5109f187513bd70f
https://doi.org/10.1002/aelm.202100580

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Progressive Breakdown on Bi-Layered Gate Oxide Stacks

Autor: Felix Palumbo, Sebastian M. Pazos, Catherine Delgado, Fernando L. Aguirre, Santiago Boyeras, Hernan Giannetta

Publikováno v: 2019 34th Symposium on Microelectronics Technology and Devices (SBMicro).

Using different proportions of A1 2 O 3 and HfO 2 dielectrics on a 10 nm thick gate insulator, this work studies the influence of each layer on the breakdown transients of metal-oxide-semiconductor (MOS) capacitors. The MOS structures are subjected t

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0bda8aaf0e70468411766097fd16a865
https://doi.org/10.1109/sbmicro.2019.8919480

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Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition

Autor: Dan Ritter, Kamira Weinfeld, Moshe Eizenberg, Ekaterina Zoubenko, Felix Palumbo, Xianbin Xu, Santiago Boyeras, Igor Krylov

Publikováno v: Journal of Vacuum Science & Technology A. 36:06A105

The authors report on the role of various reactive gases on the structure and properties of TiN thin films prepared by plasma enhanced atomic layer deposition (PEALD) from tetrakis(dimethylamido)titanium. The reactive gas plays an important role dete

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c8d5d715f9ac9b71f247573c7c2247eb
https://doi.org/10.1116/1.5057761

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