Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Santashraya Prasad"'
Autor:
Aminul Islam, Santashraya Prasad
Publikováno v:
Micro and Nanosystems. 15:55-64
Background: The Si- and GaAs-based devices are not suitable for very high-speed and high-power applications. Therefore, GaN-based devices have emerged as a potential contender. Further improvement in the device characteristics using appropriate mole
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::78c5170beb9feadc9963a06a46f64e96
https://doi.org/10.2174/1876402914666220510112625
https://doi.org/10.2174/1876402914666220510112625
Autor:
Pratik Kumar Singh, Rohit Raj, Vivek Kumar, Monalisa Pandey, Santashraya Prasad, Aminul Islam
Publikováno v:
Microsystem Technologies. 28:2807-2820
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e4c7eebe7e55daa87754900e678bcdd
https://doi.org/10.1007/s00542-022-05378-6
https://doi.org/10.1007/s00542-022-05378-6
Autor:
Santashraya Prasad, Aminul Islam
Publikováno v:
International Journal of Nanoparticles. 14:181
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ce2bd507de9bc1b528af05d335bf1173
https://doi.org/10.1504/ijnp.2022.126356
https://doi.org/10.1504/ijnp.2022.126356
Publikováno v:
2019 International Conference on Communication and Signal Processing (ICCSP).
Since embedded systems have such a wide range of applications in today’s time, there is a pressing need to meet the design requirements such as power consumption, cost, time to market, flexibility and robustness. Power consumption by embedded syste
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::53489a3e10d4a6e82b3687cb1bf6faf7
https://doi.org/10.1109/iccsp.2019.8698070
https://doi.org/10.1109/iccsp.2019.8698070
Publikováno v:
Journal of Computational Electronics. 15:172-180
This paper presents two structures of wide band gap high electron mobility transistor (HEMT). One structure is made-up of a stack of AlGaN layer over GaN layer. This structure is characterized by two-dimensional (2-D) electron gas layer formed at the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d509b28aa12c5e0c5967d416a6c7d16
https://doi.org/10.1007/s10825-015-0751-8
https://doi.org/10.1007/s10825-015-0751-8
Publikováno v:
2017 International Conference on Multimedia, Signal Processing and Communication Technologies (IMPACT).
We propose an AlGaN/AlN/GaN High Electron Mobility Transistor (HEMT), that implements Field Plate (FP) technology to enhance the breakdown voltage (F br ) of the device. The model (with optimized field plate length (Zfp) and gate electrode thickness
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::449967d6435ba5e1dde0484c78afe407
https://doi.org/10.1109/mspct.2017.8363981
https://doi.org/10.1109/mspct.2017.8363981
Autor:
Aminul Islam, Vikash Kumar, Santashraya Prasad, Shrey Khanna, Rishab Mehra, Debosmit Majumder
Publikováno v:
Advances in Intelligent Systems and Computing ISBN: 9789811033728
An active inductor based on voltage differencing voltage transconductance amplifier (VDVTA) as an active element is presented. Using the active inductor, a bandpass filter is designed and the effect of process and current variations on the characteri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f3b9cf72dd8527dbdaee93e433e9b16
https://doi.org/10.1007/978-981-10-3373-5_31
https://doi.org/10.1007/978-981-10-3373-5_31
Autor:
Anumita Sengupta, Santashraya Prasad, Aminul Islam, Akshat Chitransh, Anushruti Priya, Shreya Moonka
Publikováno v:
2017 Devices for Integrated Circuit (DevIC).
In this paper, we have analyzed the DC & RF performance of a Pseudomorphic high electron mobility transistor (PHEMT) with an Al 0.22 Ga 0.78 As supply layer, In 0.18 Ga 0.82 As channel layer built on a p-type GaAs. Output characteristics curve (I d -
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e3607a7b8cccaf3057cd19673213fcc
https://doi.org/10.1109/devic.2017.8073969
https://doi.org/10.1109/devic.2017.8073969
Autor:
Anumita Sengupta, Shreya Moonka, Aminul Islam, Anushruti Priya, Santashraya Prasad, Akshat Chitransh
Publikováno v:
2017 Devices for Integrated Circuit (DevIC).
This paper proposes a High Electron Mobility Transistor (HEMT) which analyzed using Silvaco ATLASTM Tools. The proposed device is an AlGaN/GaN HEMT with AlN acting as a spacer layer. The design also includes a field plated gate to increase the breakd
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b792e0b3f568b161ef89a38422975243
https://doi.org/10.1109/devic.2017.8073929
https://doi.org/10.1109/devic.2017.8073929
Autor:
Anumita Sengupta, Shreya Moonka, Santashraya Prasad, Anushruti Priya, Aminul Islam, Akshat Chitransh
Publikováno v:
2017 Devices for Integrated Circuit (DevIC).
A structure of AlGaN/AlN/GaN High Electron Mobility Transistor with surface passivation is proposed in this paper. AlN layer in the proposed structure acts as spacer layer in order to improve the Two Dimensional electron gas mobility formed at the Al
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d7fa5787012c99ebca118d46a61e972
https://doi.org/10.1109/devic.2017.8073970
https://doi.org/10.1109/devic.2017.8073970