Zobrazeno 1 - 10
of 39
pro vyhledávání: '"Santanu Sharma"'
Autor:
Prachuryya Subash Das, Deepjyoti Deb, Rupam Goswami, Santanu Sharma, Rajesh Saha, Hirakjyoti Choudhury
Publikováno v:
Tecnología en Marcha, Vol 36, Iss 6 (2023)
The emergence of fin-shaped field effect transistors (FinFETs) was governed by the requirement of the VLSI industry to include more functionalities per unit chip area. Enhanced gate control in a FinFET due to a surrounding gate architecture built on
Externí odkaz:
https://doaj.org/article/ef572c55a6d34d17a7a75a60735571e8
Autor:
Kritanjali Das, Santanu Sharma
Publikováno v:
AIMS Energy, Vol 10, Iss 3, Pp 356-374 (2022)
A battery source is an indispensable component in electric vehicles and its efficient usage results in improvement of battery life. The amount of energy stored in batteries, including their state of charge and efficiency, are critical metrics for eva
Externí odkaz:
https://doaj.org/article/48ca8ac992434db68bd0c16c86a561eb
Publikováno v:
2023 IEEE Devices for Integrated Circuit (DevIC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0718766c9e26478b2d92ba6f91673b01
https://doi.org/10.1109/devic57758.2023.10135040
https://doi.org/10.1109/devic57758.2023.10135040
Autor:
Subhankar Chakraborty, Santanu Sharma
Publikováno v:
2022 IEEE Calcutta Conference (CALCON).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::86e0da81127ad6698486d30ad0cbb4a8
https://doi.org/10.1109/calcon56258.2022.10059893
https://doi.org/10.1109/calcon56258.2022.10059893
Publikováno v:
Lecture Notes in Electrical Engineering ISBN: 9789811691232
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::139ac4f0d48ae517426a472d52e25c37
https://doi.org/10.1007/978-981-16-9124-9_10
https://doi.org/10.1007/978-981-16-9124-9_10
Autor:
R. Arul Prakash, Gourav Bathla, Priyanka Chawla, J. Darshan Kumar, Kritanjali Das, Sukhpal Singh Gill, Dhanalekshmi Gopinathan, Naman Gupta, Sakshi Gupta, Vatsal Gupta, N. Jagadeesh, Neetika Jain, Saurabh Jain, M. Kannan, Marcos Katz, Keshav Kaushik, K.M. Krishna Kumar, Rajalakshmi Krishnamurthi, Adarsh Kumar, Vaibhav Mishra, Sangeeta Mittal, Usha Mittal, P. Muthuchidambaranathan, Usman Naeem, Farhin Faiza Neha, Kushagra Pathak, Ashish Patil, C. Priya, R. Rajkumar, Muhammad Saad Saud, M. Senthil Kumar, S. Senthilkumar, Kazi Hassan Shakib, Deepak Kumar Sharma, Gaurav Sharma, Kriti Sharma, Santanu Sharma, Kazi Hassan Shazib, N. Shekar V. Shet, Anuraj Singh, Itu Snigdh, Akash Soni, P. Srikanth, Muhammad Naeem Tahir, Aayush Tiwari, Suyash Verma, R. Vijayanandh, Nancy Ann Watanabe, L. William Mary
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e82022549e627b7bc8945c8a738222c7
https://doi.org/10.1016/b978-0-323-90592-3.09991-2
https://doi.org/10.1016/b978-0-323-90592-3.09991-2
Autor:
Angshuman Sharma, Santanu Sharma
Publikováno v:
Journal of Energy Storage. 21:337-361
Vehicle-to-Grid (V2G) is a promising technology that allows the batteries of idle or parked electric vehicles (EVs) to operate as distributed resources, which can store or release energy at appropriate times, resulting in a bidirectional exchange of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f51b070b89b812a1a28ea3c0a6bb2773
https://doi.org/10.1016/j.est.2018.11.022
https://doi.org/10.1016/j.est.2018.11.022
Publikováno v:
2021 International Conference on Advances in Electrical, Computing, Communication and Sustainable Technologies (ICAECT).
This article presents a reliable and cost effective power MOSFET/IGBT driver for high power motor control applications. Analogous to the commercially available gate drivers, the proposed module is capable to operate in moderate range of frequency wit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4c8865a8695d30a0c2e0e0adc4bc192f
https://doi.org/10.1109/icaect49130.2021.9392583
https://doi.org/10.1109/icaect49130.2021.9392583
Publikováno v:
2021 International Conference on Advances in Electrical, Computing, Communication and Sustainable Technologies (ICAECT).
In this work a newly developed resonant gate drive circuit for high power switching applications is presented. The proposed circuit is characterized by a series connection of resonant inductor with the gate terminal of the driven switch. The switch i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e248641c147133b754143f96c75d89c2
https://doi.org/10.1109/icaect49130.2021.9392617
https://doi.org/10.1109/icaect49130.2021.9392617